The Boeing Company

Luis Figueroa

Chi-Shain Hong

Eric Y Chan

Veeravana S Sundaram

Pamela L Derry

R Jennhwa Fu

A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100.degree. C.

Strained quantum well laser for high temperature operation

The invention relates to the design of multiwavelength LED devices having multiple-lobe optical spectrums and laser diode devices with multiple designated wavelengths wherein the devices are formed by stacking various active layers of selected semiconductor materials whereby each layer is assigned to be active at a different wavelength. The independent layers are active at different wavelengths based on both their material composition and Quantum Well geometry. Independent control of current to each layer is allowed which in effect controls the spectral intensity distribution and the spectral widths. The step of allowing independent control of the current is achieved by considering the probabilities of carrier capturing, recombining carriers at various active layers and minimizing the current through all the barriers and cladding layers and optimizing the current through each active layer by controlling the individual thicknesses. For the LED device, the window and absorption sections within a Transverse Junction Geometry scheme exist to aid in control of the current within the device. For both the LED and laser devices, the active layer region can be varied in thickness in order to tailor the optical intensity of the devices.

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Bellevue, WA, United States of America

Luis Figueroa