Siliconix Technology C. V.

Siliconix Technology C. V. Ir

Vishay-siliconix

Vishay General Semiconductor, Inc.

Luigi Merlin

Rossano Carta

Laura Bellemo

Giovanni Richieri

Diego Raffo

Andrea Irace

Giovanni Breglio

Paolo Spirito

Andrea Bricconi

Sanfilippo Carmelo

Isabella Para

A local thinning process is employed on the backside of a semiconductor substrate such as a wafer in order to improve the thermal performance of the electronic device built on or in the front side of the wafer.

Local semiconductor wafer thinning

A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.

Solderable top metal for silicon carbide semiconductor devices

A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.

Power semiconductor switch with plurality of trenches

An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.

Schottky diode with improved surge capability

A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.

Semiconductor device with buffer layer

Power semiconductor switch

A mask structure and process for forming trenches in a silicon carbide or other wafer, and for implanting impurities into the walls of the trenches using the same mask where the mask includes a thin aluminum layer and a patterned hard photoresist mask. A thin LTO oxide may be placed between the metal layer and the hard photoresist mask.

Growing community of inventors

Turin, Italy

Luigi Merlin