Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Ludwig Peyker

Herbert Brunner

Michael Zitzlsperger

Markus Pindl

Alexander Linkov

Daniel Richter

Matthias Goldbach

Patrick Kromotis

Christopher Wiesmann

Daniel Leisen

Thomas Reeswinkel

Christina Keith

Matthias Hien

Torsten Baade

Jens Eberhard

Emilia Dinu

Emanuel Hofmann

Simone Kiener

Kristin Grosse

In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

Optoelectronic semiconductor device and method for producing optoelectronic semiconductor devices

A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

Method of producing an optoelectronic component

An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiOis arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 &#x3bc;m, and a third layer is arranged above the second layer.

Optoelectronic component and method for the production thereof

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Wuppertal, Germany

Ludwig Peyker