Siemens Aktiengesellschaft

Infineon Technologies Ag

Siemens Aktiengellschaft

Ludwig Leipold

Jenoe Tihanyi

Roland Weber

Rainald Sander

Christine Fellinger

Josef Einzinger

Jeno Tihanyi

Paul Nance

Ruediger Mueller

Michael Pomper

Wolfgang Werner

Hubert Rothleitner

Jens-Peer Stengl

Josef-Matthias Gantioler

Peter Sommer

Jens P Stengl

Nance: Paul

Thomas Theobald

A circuit configuration for driving a semiconductor switching element includes an output terminal for the connection of a semiconductor switching element, a capacitive charge storage configuration, which is coupled to the output terminal, a charging and discharging circuit having at least one input for feeding in at least one drive signal and an output connected to the capacitive charge storage configuration, and a discharging circuit with a connecting terminal. The connecting terminal is connected to the capacitive charge storage configuration and provides a discharging current for the charge storage configuration. A charging current or a discharging current for the capacitive charge storage configuration is available at the output depending on the drive signal. A method for driving the semiconductor switching element is also provided.

Circuit configuration for driving a semiconductor switching element and method for same

A method for generating a control signal after a predeterminable period of time is described. The method includes applying a voltage to an inductor at a beginning of a time measurement; and outputting, via a current threshold value detector, the control signal if a current through the inductor exceeds a predeterminable threshold value. The invention also relates to a timing circuit.

Method and timing circuit for generating a switching or control signal

A circuit configuration for driving an ignition coil includes a first semiconductor switch having a load path connected in series with a primary winding of the ignition coil, and having a control electrode, which is driven in accordance with a first drive signal. The circuit configuration further includes a second semiconductor switch having a load path connected in parallel with the primary winding and having a control electrode, which is driven in accordance with a second drive signal.

Circuit configuration for driving an ignition coil

A method for fabricating direct wafer bond Si/SiO.sub.2 /Si substrates in which trenches are etched into a rear side of a device wafer. Subsequently, the rear side of the device wafer is ground. The device wafer is then placed by its front side onto the carrier wafer and the wafers are cross-linked to each other. The method has the advantage that a trench depth is no longer defined by an inaccurate etching process but rather by a thinning-back process that can be precisely controlled.

Method for fabricating direct wafer bond Si/SiO.sub.2 /Si substrates

An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.

Integrated power semiconductor component having a substrate with a

An integrated comparator circuit includes two complementary MOSFETs having main current paths being connected together in a series circuit at a connecting point. An inverter stage has two complementary MOSFETs with gate terminals connected to the connecting point. First, second and third terminals are provided. The first and second terminals are for an operating voltage, and the second and third terminals are for a voltage to be compared. The series circuit is connected between the first and third terminals, and the inverter stage is connected between the first and second terminals. One of the MOSFETs of the series circuit connected to the first terminal and one of the MOSFETs of the inverter stage connected to the first terminal are of the same channel type. The other of the MOSFETs of the series circuit connected to the third terminal and the other of the MOSFETs of the inverter stage connected the second terminal are of the same channel type.

Integrated comparator circuit

Power FETs having a load at the source side require a gate voltage lying above the drain voltage in order to be driven completely conductive. This can occur with a known pump circuit. In the drive circuit disclosed, the diode connected to the gate terminal of the power FET is a depletion FET whose substrate terminal is applied to the oscillating voltage that is required for the operation of the pump circuit. The cut off voltage is thus synchronously set relative to the oscillating voltage such that low losses arise when loading C.sub.GS and an adequately high inhibit voltage can be built up when loading the pump capacitor.

Drive circuit for a power MOSFET with load at the source side

A circuit configuration for limiting current flowing through a power MOSFET includes a voltage divider being connected between drain and source terminals of the power MOSFET and having a node at which a voltage following a drain-to-source voltage of the power MOSFET drops. A control transistor has a load path connected between the gate terminal and the source terminal of the power MOSFET. The control transistor is made conducting as a function of the voltage at the node of the voltage divider if the drain-to-source voltage of the power MOSFET exceeds a predetermined value. A resistor is connected between the gate terminal of the control transistor and the gate terminal of the power MOSFET. A depletion FET has a drain terminal connected to the gate terminal of the control transistor. The source terminal of the depletion FET is connected to the node of the voltage divider. The gate terminal of the depletion FET is connected to the source terminal of the power MOSFET.

Circuit limiting the load current of a power MOSFET

A circuit for detecting the non-operating condition of a load which is connected in series with an electronic switch wherein a comparator has a first input which is connected to the junction point between the load and the electronic switch and has a second input which is a reference voltage such that when the load fails the comparator produces an output to indicate such condition and wherein the reference voltage is lower than the normal voltage when the load is operating properly and is higher than when the load is in the inoperative condition.

Circuit for detecting the failure of a load which is connected in series

The gate-source capacitance of a power MOSFET (1) can be protected against positive and negative excess voltages by two integrated Zener diodes (3, 4) the anodes of which are coupled to each other and the cathodes of which are respectively coupled to the gate and source terminals of the power MOSFET. However, when a control voltage is applied, the parasitic bipolar transistor associated with one of the Zener diodes is switched on and prevents the MOSFET from completely switching on. The parasitic bipolar transistor is rendered harmless by the fact that the anode terminal is coupled to a source terminal (S) MOSFET (1) when a gate-source voltage is applied.

Gate-source protective circuit for a power MOSFET

In order to rapidly reduce the magnetic energy of an inductive load (2), the driving voltage must be high. When the load (2) is disconnected via a MOSFET (3), then a premature activation of the MOSFET (3) given reversal of the voltage at the inductive load (2) must be prevented. A series circuit of a Zener diode and of a controllable switch (3) is connected between the gate and the load (2). A current source (depletion MOSFET 5) whose current is lower than the current that would flow upon Zener breakdown is connected between the gate and the source of the power MOSFET (1). The MOSFET (3) becomes conductive upon Zener breakdown and the energy is quickly reduced by a high voltage, essentially by the Zener voltage.

MOSFET switch circuit for preventing the switch being turned on during

The voltage (U.sub.DS) on a power MOSFET (1) is compared with a voltage (U.sub.V) derived from the sum of the voltages of a Zener diode (3) and the threshold voltage (U.sub.T) of a second MOSFET (5) to detect a short circuit in a load (2) in series with the power MOSFET (1). When this total voltage is exceeded, the second MOSFET conducts. Its load current is then evaluated as the short circuit signal.

Circuitry for detecting a short circuit of a load in series with an FET

A power MOSFET composed of a plurality of individual MOSFETs connected in parallel, wherein an additional sensing MOSFET monitors the current in the power MOSFET. The sensing MOSFET has a surface comparatively smaller than the power MOSFET and is connected in parallel with the power MOSFET with a resistor between the source of the power MOSFET and the source of the sensing MOSFET. The sensing MOSFET and resistor are integrated with an integrated circuit provided for the control of the power MOSFET.

Power MOSFET with current-monitoring

A circuit arrangement for controlling load current of a power MOSFET wherein the load is connected at the source terminal includes a second FET having a defined threshold voltage connected with its drain-source path inserted between the gate and source of the power MOSFET. A third FET connects the gate terminal of the second FET to the drain voltage of the power MOSFET when the power MOSFET is in the conductive condition. When the drain-source voltage of the power MOSFET becomes higher than the threshold voltage of the second FET, the second FET becomes conductive and drives the gate-source voltage of the power MOSFET down.

Circuit arrangement for controlling the load current in a power MOSFET

A semiconductor component with a power MOSFET and control circuit for controlling the power MOSFET. Both the power MOSFET and the control circuit have separate semiconductor bodies. The semiconductor body of the control circuit is arranged on one of the main surfaces of the semiconductor body of the power MOSFET. The control circuit is electrically insulated from the MOSFET by an insulating layer and mechanically coupled to the MOSFET by means of a bonding layer. The MOSFET is fastened to a cooling body which serves as a heat sink for the semiconductor component. The terminals of the control circuit and the MOSFET are attached to housing connections with leads.

Growing community of inventors

Munich, Germany

Ludwig Leipold