Infineon Technologies Ag

Infineon Technologies Dresden Gmbh

Ludwig Dittmar

Annalisa Cappellani

Dirk Meinhold

Maik Stegemann

Dirk Schumann

Wolfgang Gustin

Various embodiments relate to an optoelectronic component including: an electronic circuit structure including an electronic circuit and a metallization structure disposed over the electronic circuit, the metallization structure including one or more contact pads electrically connected to the electronic circuit; and an optoelectronic structure disposed over the metallization structure, the optoelectronic structure including at least one electrode structure being in direct contact with the one or more contact pads, wherein the electrode structure includes an electroless plated electrically conductive material.

Optoelectronic component and a method for manufacturing an optoelectronic component

The invention relates to a method for contacting parts of a component integrated into a semiconductor substrate (). According to the inventive method, a first contact hole is produced in an insulating layer (), said contact hole being then filled with contact material () and connected to a line. The aim of the invention is to minimise the processes required for contacting parts of a component integrated into a semiconductor substrate. To this end, the hard mask () used to produce the contact hole is also used to structure the line.

Method for contacting parts of a component integrated into a semiconductor substrate

A gate layer stack formed with at least two layers is firstly patterned anisotropically and then thelower layer is etched. An isotropic, preferably selective etching step effects a lateral undercutting, i.e. removal of the lower layer as far as the predetermined channel length to form a dimensionally accurate T-gate transistor with a very short channel length.

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Dresden, Germany

Ludwig Dittmar