Infineon Technologies Ag

Ludwig Busch

Ivan Nikitin

Michael Niendorf

Oliver Markus Kreiter

Thomas Stoek

Sanjay Kumar Murugan

Christian Neugirg

Ke Yan Tean

Elvis Keli

Mei Fen Hiew

Angel Enverga

Kean Ming Koe

Tian See Hoe

Bernhard Stiller

A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.

Power semiconductor module

A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.

Molded semiconductor module having a mold step for increasing creepage distance

Growing community of inventors

Erwitte, Germany

Ludwig Busch