U.S. Philips Corporation

Ludovicus Vugts

Cornelis W Berghout

Jan Snel

Gerardus J Janssen

Francis A Gys

A chip resistor having a value ranging from 10 Ohm to 100 kOhm and having a low temperature coefficient a low noise level and a high stability. The resistor is manufactured by means of the thin-fil technique. For this purpose, an NiCrAl-resistance layer is applied to one side of a flat ceramic support, and contact strips of Ni or an Ni-alloy, possibly preceded by an intermediate layer, are provided at two ends of the said support. An insulating lacquer layer is then applied to the resistance layer and partly overlaps the contact strips. The solderable supply strips are provided on the exposed metal portions.

Chip resistor and method for the manufacture thereof

A metal film resistors consisting of an Ni-Al alloy with an Al content of at least 14.5 and at most 22% by weight with a maximum of 2.5% by weight of compatible contaminants are disclosed. Those can be used in the resistance range between 0.5 Ohm and 5 KOhm, are very stable and can be obtained with a low temperature coefficient of the resistance below .+-.50 ppm/.degree. C. between -55.degree. C.-+150.degree. C.

Metal film resistors

A resistor having an insulating substrate bearing a thin layer of the alloy CrSi.sub.x, where 1.ltoreq.x.ltoreq.5 and which layer is doped with nitrogen. The doping may be spread homogeneously throughout the thickness or be concentrated in one or two thickness zones on the outside and/or on the side adjoining the substrate. As a result of the nitrogen doping an improvement of the stability of the resistor is obtained.

Method of sputtered depositing chromium-silicon-nitrogen resistor

A resistor having of an insulating substrate bearing a thin layer of the alloy CrSi.sub.x, where 1.ltoreq.x.ltoreq.5 and which layer is doped with nitrogen. The doping may be spread homogeneously throughout the thickness or be concentrated in one or two thickness zones on the outside and/or on the side adjoining the substrate. As a result of the nitrogen doping an improvement of the stability of the resistor is obtained.

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Eindhoven, Netherlands

Ludovicus Vugts