Arm Limited

Suvolta, Inc.

Mie Fujitsu Semiconductor Limited

Cerfe Labs, Inc.

Lucian Shifren

Pushkar Ranade

Carlos Alberto Paz De Araujo

Kimberly Gay Reid

Scott E Thompson

Jolanta Bozena Celinska

Thomas Hoffmann

Sachin R Sonkusale

Paul E Gregory

Dalong Zhao

Robert Campbell Aitken

Teymur Bakhishev

Lance A Scudder

Azeez Jennudin Bhavnagarwala

Michael Duane

Weimin Zhang

Sameer S Pradhan

Akshay Kumar

Piyush Agarwal

Lingquan Wang

Greg Yeric

Glen Arnold Rosendale

Gregory Munson Yeric

Vikas Chandra

Sung Hwan Kim

Christopher Randolph McWilliams

U C Sridharan

Yujie Liu

Shidhartha Das

Reza Arghavani

Catherine De Villeneuve

Taiji Ema

Bal S Sandhu

Brian Tracy Cline

Saurabh Pijuskumar Sinha

Vivek Asthana

Andreas Hansson

Manuj Rathor

Saurabh Vinayak Suryavanshi

Lawrence T Clark

Richard Stephen Roy

Mudit Bhargava

Jing Wang

Charles Stager

Naveen Suda

Sachrin R Sonkusale

Uc Sridharan

Teymur Bakhisher

Broadly speaking, the present techniques exploit the properties of correlated electron materials for artificial neural networks and neuromorphic computing. In particular, the present techniques provide apparatuses/devices that comprise at least one correlated electron switch (CES) element and which may be used as, or to form, an artificial neuron or an artificial synapse.

Correlated electron switch elements for brain-based computing

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Correlated electron device formed via conversion of conductive substrate to a correlated electron region

Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Fabricating correlated electron material (CEM) devices

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.

Formation of a correlated electron material (CEM)

Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.

Switch cell device

Subject matter disclosed herein may relate to correlated electron switches.

Correlated electron switch

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

Access devices to correlated electron switch

Methods are disclosed herein for controlling the switching characteristics of correlated electron material (CEM) switching devices. The methods comprise one or more of controlling a density of grain boundaries in the CEM layer, controlling an open pore porosity in the CEM layer and controlling a surface area of exposed surfaces of the CEM layer during the fabrication of the CEM switching devices.

Methods for controlling switching characteristics of a correlated electron material device

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

Switching device formed from correlated electron material

A correlated electron material device is described to comprise a conductive substrate and a layer of a correlated electron material disposed over the conductive substrate. The layer of correlated electron material may comprise a metal rich transition or other metal compound, and at least a portion of anion vacancies within the metal rich transition or other metal compound are occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal compound. Under certain conditions, the electron back-donating extrinsic ligand occupying anion vacancies may be activated so as to impart particular switching characteristics in the correlated electron material device.

Correlated electron material (CEM) device

Subject matter disclosed herein may relate to devices formed from correlated electron material.

Correlated electron switch structures and applications

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Formation of correlated electron material (CEM) device via dopant deposition and anneal

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.

Correlated electron material devices using dopant species diffused from nearby structures

Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.

Asymmetric correlated electron switch operation

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San Jose, CA, United States of America

Lucian Shifren