Asm IP Holding B.v.

Asm International N.v.

Lucian C Jdira

Theodorus G M Oosterlaken

Herbert Terhorst

Chris G M De Ridder

Bert Jongbloed

Dieter Pierreux

Werner Knaepen

Klaas P Boonstra

Cornelius A Van Der Jeugd

Theodorus Oosterlaken

Chris De Ridder

Jeroen De Jonge

Radko G Bankras

Eric James Shero

Carl Louis White

Michael W Halpin

Naoto Tsuji

Todd Robert Dunn

Kyle Fondurulia

John Kevin Shugrue

Yoshio Susa

Adriaan Garssen

Christianus G M De Ridder

Gido Van Der Star

Steven Van Aerde

Kelly Houben

Kornelius Haanstra

Chaggai Shmuel Ganani

Bartholomeus Hans Louis Lindeboom

Christopher Wuester

Cornelis Thaddeus Herbschleb

Juul Keijser

Noureddine Adjeroud

Arjen Klaver

Ruslan Kvetny

Jeroen A Smeltink

Robin Roelofs

Gijsbert Hendrik Ronner

Sumit Sachdeva

Melvin Verbass

Julien Laurentius Antonius Maria Keijser

Chris GM De Ridder

The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

Injector configured for arrangement within a reaction chamber of a substrate processing apparatus

The disclosure relates to a substrate processing apparatus for processing a plurality of substrates. The apparatus comprising a reactor mounted in the apparatus and configured for processing substrates and a reactor mover for moving the reactor for maintenance. The reactor mover is constructed and arranged with a lift to move the reactor to a lower height to allow for access to the reactor by a maintenance worker.

Substrate processing apparatus, reactor mover for moving a reactor of the apparatus and method of maintaining the reactor of the apparatus

An apparatusfor processing a plurality of substratesis provided. The apparatus may have a process tubecreating a process chamber; a heatersurrounding the process tube; a flangefor supporting the process tube; and a doorconfigured to support a wafer boatwith a plurality of substratesin the process chamber and to seal the process chamber. An exhaust operably connected to the process chambermay be provided to remove gas from the process chamber via a first exhaust duct. The apparatus may be provided with an extractor chambersurrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust ductto remove gas from the extractor chamber.

Apparatus for processing a plurality of substrates provided with an extractor chamber

The disclosure relates to a flange for a process tube in an apparatus for processing substrates, e.g., a vertical furnace. The flange may be provided with an opening for in use giving access to the process chamber of the process tube and a cooling channel for allowing a cooling fluid to flow there through and cool the flange. A material with a heat conductivity between 0.1 and 40 W/m K may be at least partially provided in between the cooling fluid and the rest of the flange.

Flange and apparatus for processing substrates

A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

Substrate processing apparatus with an injector

A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.

Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas

Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

Batch furnace assembly and method of operating a batch furnace assembly

There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising:

Layer forming method and apparatus

The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

Substrate processing apparatus and method

An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.

Atomic layer deposition apparatus

A spatial atomic layer deposition apparatus (), including a showerhead () with a showerhead side () having a center, a central area and a circumferential area. The apparatus also includes a susceptor () having a substrate support side that extends parallel to and of opposite the showerhead side forming a gap. The susceptor and the showerhead are rotatable relative to each other around an axis of rotation. The apparatus has a plurality of switchable showerhead sections. The apparatus also includes a plurality of multi-way valve assemblies. Each switchable showerhead section is fluidly connected with one of the plurality of multi-way valve assemblies, so as to fluidly connect a selected one of a plurality of different gas sources with that switchable showerhead section.

Apparatus for semiconductor wafer processing

A wafer boat cooldown device comprising a bottom plate and a rotatable table that is rotatable between a number of index positions. The rotatable table comprises at least two wafer boat positions for supporting a wafer boat. A vertically extending wall structure is mounted on the rotatable table and creates, at each wafer boat position, a wafer boat chamber having a gas supply area and a gas discharge area. The wafer boat cooldown device further comprises a plenum chamber which extends under the bottom plate. The plenum chamber accommodates at least one gas/liquid heat exchanger.

Wafer boat cooldown device

An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas supply manifold and method of supplying gases to chamber using same

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Almere, Netherlands

Lucian C Jdira