Horiba, Ltd.

Politecnico Di Milano

Bruker Nano Gmbh

Luca Bombelli

Carlo Fiorini

Daniel Radu Goran

Marcus Noack

Oliver Boslau

Paolo Trigilio

The present invention refers to a hybrid integrated silicon drift detector (HiSDD) for X-ray detection, particularly to a HiSDD combining a silicon drift detector (SDD) with a low-noise preamplifier on a SDD sensor chip to improve the electrical and structural properties of the detector assembly. The invention further refers to a corresponding method for the fabrication of a HiSDD. A HiSDD according to the invention hybridly integrates a silicon drift detector, SDD, sensor chip and a preamplifier module; wherein electrically conductive paths are formed on a surface of the SDD sensor chip, having first ends configured for flip chip bonding and second ends configured for wire bonding; wherein the preamplifier module having contacts disposed on a surface of the preamplifier module, and wherein the first ends of the electrically conductive paths are flip chip bonded to the contacts of the preamplifier module.

Hybrid integrated silicon drift detector and method for fabrication thereof

A pixelated sensor comprises a semiconductor substrate chip with a plurality of sensor pixels and a detector chip with a plurality of detector pixels. Each of the sensor pixels is configured as a photodiode and is electrically connected to an input node of one of the detector pixels. The detector pixels are further configured to convert and output the sensor input to an analog to digital converter. The detector chip further comprises first and second macropixels and a plurality of second macropixels, wherein each first macropixel is formed by subset of detector pixels switchably interconnected via a first conducting grid and wherein each second macropixel is formed by a subset of first macropixels switchably interconnected via a second conducting grid.

Detector, methods for operating a detector and detector pixel circuit

In a preamplifier (amplifier) for the radiation detector, an interconnection layer connected to the bonding pad forms one electrode of a feedback capacitor. Since there is no wiring for connecting the bonding pad and capacitor, a parasitic capacitance caused by the wiring will not be generated. Moreover, the capacitor is arranged below the bonding pad with a conductive layer serving as the other electrode, so that the feedback capacitance of the capacitor is included in the parasitic capacitance between the interconnection layer and the substrate. Compared to the conventional case, an amount of capacitance corresponding to the parasitic capacitance caused by wiring and the feedback capacitance for the capacitor is reduced from the input capacitance. Thus, the input capacitance for the amplifying circuit is reduced.

Amplifier and radiation detector

In a preamplifier (amplifier) for detecting radiation, an output of the preamplifier is set as an output of the first amplifying circuit, a capacitor is connected in parallel to the first amplifying circuit, and the second amplifying circuit with a positive gain of less than onefold is connected between the output terminal and the input terminal of the first amplifying circuit through a switch. When the switch is closed, the capacitor is discharged and reset. As the gain of the second amplifying circuit is less than onefold, the gain of the preamplifier is less than the loop gain of the first amplifying circuit alone during the reset operation, making it harder for oscillation to occur. Accordingly, the preamplifier can reduce the compensation capacitance compared to a conventional case and can shorten the reset time, while preventing oscillation.

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Milan, Italy

Luca Bombelli