Limburgs Universitair Centrum

Other

Imec Vzw

Interuniversitair Micorelektronica Centrum (Imec, Vzw)

Interuniversitair Micro-Elektronica Centrum Vzw

Limburgs Universitaire Campus

Interuniversitair Micro-Elektronic Centrum Vzw

Interuniversitair Micro-Electronika Centrum Vzw

Luc Irena De Schepper

Ward Aime De Ceuninck

Jean Joseph Roggen

Lambert Mathias Stals

Eric Beyne

Filip Christiaens

Luc Tielemans

Jan Van Olmen

Alessandro Goldoni

A method for measuring resistance changes is described to study electromigration induced failures in conductive patterns. This method can provide a basis for lifetime predictions based on low value failure criteria, i.e. small resistance changes in the conductive patterns in a limited period of time. Two essentially identical so-called test and reference structures are placed close to each other on the same substrate and submitted to at least one sequence of a stress period and a measurement period. During a stress period, a DC current with a high current density is applied to the test structure thereby enhancing electromigration, while substantially simultaneous an AC current is applied to the reference structure leading to the same amount of power dissipation in said reference structure as the amount of power dissipation in said test structure, introduced by said DC stress current. The method of the present invention makes it possible to distinguish in a very accurate way between resistance changes induced by electromigration and resistance changes induced by other disturbances.

Method for measuring electromigration-induced resistance changes

A method for evaluating the thermal impedance of packaged semiconductor chips. A measuring apparatus includes a thermostatic bath filled with a dielectric liquid and a temperature sensor for measuring the temperature of the bath. The semiconductor chip is subjected to a calibration step followed by a thermal response measurement step. Increasing the power pulse length allows measurement of the steady-state junction-to-case thermal resistance. The measuring apparatus and method is further used for tracing in-situ degradation of packaged semiconductor chips due to power cycling.

Method for thermal impedance evaluation of packaged semiconductor

An apparatus and method for measuring a parameter of a sample or component at a measurement temperature, wherein the parameter and the measurement temperature are measured at substantially the same time. A temperature coefficient of the sample or component is also established by using temperature fluctuations measured at or near the sample at the time at which the parameter is measured. The temperature coefficient is used to correct the measured parameter data and enhance its stability.

Method and apparatus for local temperature sensing for use in performing

Method for local temperature sensing for use in performing high

A system for evaluating the thermal impedance of packaged semiconductor chips. The measuring apparatus includes a thermostatic bath filled with a dielectric liquid and a temperature sensor for measuring the temperature of the bath. The semiconductor chip is subjected to a calibration step followed by a thermal response measurement step. Increasing the power pulse length allows measurement of the steady-state junction-to-case thermal resistance. The measuring apparatus and method is further used for tracing in-situ degradation of packaged semiconductor chips due to power cycling.

Method and apparatus for thermal impedance evaluation of packaged

An apparatus and method for determining the reliability of an electronic component by performing measurements which enable the ageing behavior of a parameter of that component to be predicted over time. The parameter measurements are made in-situ within the oven or environment used to control the temperature at which the measurements are made. The oven is controlled so that its temperature is kept stable, thereby permitting very high resolution measurements to be made over a relatively short time span. The temperature stability of the oven ensures that the changes of the electromagnetic parameter to be measured as a result of temperature fluctuations are negligible relative to the changes as a result of the ageing phenomena which occur in the component over time. The high resolution measurements are then used to model the parameter value as a function of time based on a deterministic model of how that parameter of the component varies over the lifetime of the component. The model is extrapolated over time to determine the reliability of the component as it ages. The result of the invention is a reliable prediction of the component's parameter value as a function of time, which enables a user or manufacturer to know when the parameter value will exceed its intended tolerance values, and either fail or cause the device in which it is incorporated to become unreliable.

Apparatus and method for measuring electromagnetic ageing parameter of a

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Hasselt, Belgium

Luc Irena De Schepper