International Business Machines Corporation

Other

Infineon Technologies Ag

Globalfoundries Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Nexcis

Lubomyr Taras Romankiw

Hariklia Deligianni

Eugene John O'Sullivan

Naigang Wang

William Joseph Gallagher

Qiang Huang

Bucknell Chapman Webb

Philipp Herget

Robert Fontana

Shafaat Ahmed

Maurice Mason

Panayotis Constantinou Andricacos

Robert J Von Gutfeld

Matteo Flotta

Sol Krongelb

Bojan Petek

Eugene E Castellani

Madhav Datta

Andrew John Kellock

John Owen Dukovic

Joonah Yoon

Dean A Herman, Jr

Aloysius T Pfeiffer

Theodore Gerard Van Kessel

Yves Corfield Martin

Daniel A Nepela

Yu Luo

David A Thompson

John Casimir Slonczewski

Kejia Wang

Raman Vaidyanathan

Bernell E Argyle

Hin P Lee

Thomas J Beaulieu

Thomas C Arnoldussen

Jei-Wei Chang

Devendra K Sadana

Stephen W Bedell

John Ulrich Knickerbocker

Guy M Cohen

Evan G Colgan

Timothy Joseph Chainer

Katherine Lynn Saenger

Bing Dang

Peter Alfred Gruber

Robert L Wisnieff

Emanuel Israel Cooper

Mary Beth Rothwell

John Patrick Hummel

Yang Liu

Judith Marie Roldan

Steven Erik Steen

Robert Lee Melcher

Frederic Maurer

John Christopher Flake

Patrick M McCaffrey

Belgacem Haba

Robert G Biskeborn

Veeraraghavan S Basker

Vamsi Krishna Paruchuri

Rajarao Jammy

Rainer Leuschner

Yoichi Taira

Edward John Yarmchuk

Keiji Matsumoto

Michael C Gaidis

Carlos Juan Sambucetti

Terrence Robert O'Toole

Ravi F Saraf

Kuniaki Sueoka

Xiaoyan Shao

Janusz Jozef Nowak

Vlasta A Brusic

Michael Hatzakis

Arunava Gupta

Hong Xu

Judith Marie Rubino

Steven F Starcke

Wilma Jean Horkans

Thomas Edward Dinan, Jr

Nathaniel C Anderson

Lian Guo

Robert A Scranton

Ravindra V Shenoy

Mason L Williams, Iii

Norman G Ainslie

Robert W Hitzfeld

Kwong-Hon Wong

John V Powers

Kathleen B Reuter

Marinus Johannes Petrus Hopstaken

Ekkehard F Miersch

Ivan Haller

Joseph C Andreshak

Eberhard A Spiller

Richard K Wilmer

Edward August Giess

Marybelle C Blakeslee

Daniel W Chapman

Robert M Browne

Present disclosure relates to magnetic materials, chips having magnetic materials, and methods of forming magnetic materials. In certain embodiments, magnetic materials may include a seed layer, and a cobalt-based alloy formed on seed layer. The seed layer may include copper, cobalt, nickel, platinum, palladium, ruthenium, iron, nickel alloy, cobalt-iron-boron alloy, nickel-iron alloy, and any combination of these materials. In certain embodiments, the chip may include one or more on-chip magnetic structures. Each on-chip magnetic structure may include a seed layer, and a cobalt-based alloy formed on seed layer. In certain embodiments, method may include: placing a seed layer in an aqueous electroless plating bath to form a cobalt-based alloy on seed layer. In certain embodiments, the aqueous electroless plating bath may include sodium tetraborate, an alkali metal tartrate, ammonium sulfate, cobalt sulfate, ferric ammonium sulfate and sodium borohydride and has a pH between about 9 to about 13.

Electrolessly formed high resistivity magnetic materials

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

High resistivity soft magnetic material for miniaturized power converter

A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

Ohmic contact of thin film solar cell

A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

Laminated magnetic materials for on-chip magnetic inductors/transformers

A method of electrolessly plating an iron-based substrate, including immersing an iron-based substrate in an acidic solution, immersing the iron-based substrate in a basic complexing solution, immersing the iron-based substrate in a catalytic metal solution including a catalytic metal, and immersing the iron-based substrate in an electroless nickel plating solution or an electroless cobalt plating solution.

Pretreatment of iron-based substrates for electroless plating

A method of forming surface protrusions on an article, and the article with the protrusions attached. The article may be an Integrated Circuit (IC) chip, a test probe for the IC chip or any suitable substrate or nanostructure. The surface protrusions are electroplated to a template or mold wafer, transferred to the article and easily separated from the template wafer. Thus, the attached protrusions may be, e.g., micro-bumps or micro pillars on an IC chip or substrate, test probes on a probe head, or one or more cantilevered membranes in a micro-machine or micro-sensor or other micro-electro-mechanical systems (MEMS) formed without undercutting the MEMS structure.

Method of forming surface protrusions on an article and the article with the protrusions attached

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

Magnetic multilayer structure

In one embodiment, the invention is a method and apparatus for chip cooling. One embodiment of an apparatus for cooling a heat-generating device includes an inlet for receiving a fluid, a manifold comprising a plurality of apertures formed therein for decreasing the pressure of the fluid from a first pressure by adiabatic expansion for impinging the fluid on the heat-generating device once the pressure of the fluid is decreased from the first pressure.

Method and apparatus for chip cooling

A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.

Laminating magnetic cores for on-chip magnetic devices

Growing community of inventors

Briarcliff Manor, NY, United States of America

Lubomyr Taras Romankiw