Altera Corporation

Lu Zhou

Andy Louie Lee

Philip Pan

Aniket Kadkol

David Wolk Mendel

Irfan Rahim

Gary Lai

Bruce B Pedersen

Srinivas Perisetty

Madhuri Mailavaram

Qi Xiang

David Lewis

Jun Liu

William Bradley Vest

David Cashman

Albert Ratnakumar

Jeffrey Xiaoqi Tung

Triet M Nguyen

Yanzhong Yu

An integrated circuit having a logic element that includes an array of storage elements convertibly functioning as either a configuration random access memory (CRAM) or a static random access memory (SRAM) is provided. The logic element includes first and second pairs of data paths having dedicated multiplexers. In one embodiment, the first and second pairs of data paths are multiplexed into bit lines of a row of the array. The logic element also includes a data path control block generating control signals for each of the dedicated multiplexers. The control signals determine whether the storage elements function as a CRAM or a SRAM. A method for selectively configuring a memory array between a CRAM mode and SRAM mode are provided.

Scaleable look-up table based memory

A programmable logic device includes logic blocks such as a logic array blocks (LAB) that can be configured as a random access memory (RAM) or as a lookup table (LUT). A mode flag is provided to indicate the mode of operation of configuration logic such as a configuration RAM (CRAM) used during partial reconfiguration of a logic block. An enable read flag is provided to indicate if values stored in the configuration logic are to be read out or a known state is to be read out during a data verification process. Thus, exclusion and inclusion of portions of a region of configuration logic from data verification and correction processes allow a region of configuration logic to store both a design state and a user defined state. Moreover, the region of configuration logic may be dynamically reconfigured from one state to another without causing verification errors.

Reconfigurable logic block

Memory elements are provided that exhibit immunity to soft error upset events when subjected to radiation strikes such as high-energy atomic particle strikes. The memory elements may each have four inverter-like transistor pairs that form a bistable element and a pair of address transistors. There may be four nodes in the transistor each of which is associated with a respective one of the four inverter-like transistor pairs. There may be two control transistors each of which is coupled between the transistors in a respective one of the inverter-like transistor pairs. During data writing operations, the two control transistors may be turned off to temporarily decouple the transistors in two of the four inverter-like transistor pairs.

Memory elements with increased write margin and soft error upset immunity

A programmable logic device includes logic blocks such as a logic array blocks (LAB) that can be configured as a random access memory (RAM) or as a lookup table (LUT). A mode flag is provided to indicate the mode of operation of configuration logic such as a configuration RAM (CRAM) used during partial reconfiguration of a logic block. If the mode flag indicates a design state, the configuration logic associated with the logic block is included in data verification and correction processes. If the mode flag indicates a user defined state, the configuration logic associated with the logic block is excluded from data verification and correction processes. Thus, exclusion and inclusion of portions of a region of configuration logic from data verification and correction processes allow a region of configuration logic to store both a design state and a user defined state without causing deleterious effects.

Reconfigurable logic block with user RAM

Systems and methods for managing a write operation are described. The systems include a logic element (LE) including an N-input look-up table (LUT) having a configurable random access memory (CRAM) including 2memory cells. The systems further include a write address decoder coupled to the LE and a write address hard logic register that stores an address of one of the memory cells. N is an integer. The hard logic register removes a dependency of a timing relationship between a write address launch and a write to the CRAM on a design of an integrated circuit.

Methods and systems for managing a write operation

An integrated circuit with memory elements is provided. The memory elements may have memory element transistors with body terminals. Body bias control circuitry may supply body bias voltages that strengthen or weaken memory element transistors to improve read and write margins. The body bias control circuitry may dynamically control body bias voltages so that time-varying body bias voltages are supplied to memory element transistors. Address transistors and latch transistors in the memory elements may be selectively strengthened and weakened. Process variations may be compensated by weakening fast transistors and strengthening slow transistors with body bias adjustments.

Memory elements with body bias control

There are provided methods and devices for providing overdrive voltages to address lines to help prevent leakage current in semiconductor memories, such as configuration memories used with programmable logic devices. Specifically, for example, there is provided a memory that includes an array of memory cells. Each memory cell includes a retainer circuit. An access transistor is coupled to the retainer circuit. An overdrive voltage level may be applied to the access transistor.

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Santa Clara, CA, United States of America

Lu Zhou