Toyoda Gosei Co., Ltd.

Koito Manufacturing Company, Ltd.

Meijo University

Lu Weifang

Isamu Akasaki

Tetsuya Takeuchi

Motoaki Iwaya

Satoshi Kamiyama

Ryo Nakamura

Naoki Sone

Kazuyoshi Iida

Masaki Oya

Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Semiconductor light emitting device and manufacturing method of semiconductor light emitting device

Growing community of inventors

Nagoya, Japan

Lu Weifang