Nxp USA, Inc.

Freescale Semiconductor,inc.

Lu Li

Lakshminarayan Viswanathan

Mahesh K Shah

Paul Richard Hart

Freek Egbert Van Straten

Jaynal Abedin Molla

David F Abdo

Geoffrey Tucker

Justin Eugene Poarch

Carl Emil D'Acosta

Sharan Kishore

Zhiwei Gong

Li Li

Burton Jesse Carpenter

Fernando A Santos

Elie A Maalouf

Michael E Watts

Hussain Hasanali Ladhani

Fui Yee Lim

Hamdan Ismail

Samy R N Naidu

A substrate is bonded to a conductive metallic flange via a free-standing heterostructure thermal interface material that includes physically distinct volumes of different conductive materials. The heterostructure thermal interface material (a bimetallic foil, for example) is metallurgically bonded to the bottom of the substrate on one side and metallurgically bonded to the flange on an opposite side. The constituent materials forming the thermal interface material and their dimensions can be chosen to achieve a desired thermal and/or electrical conductivity while allowing the coefficient of thermal expansion (CTE) to be matched to the substrate and/or the flange.

Low-stress thermal interface

Radio frequency (RF) packages containing multilevel power substrates and associated fabrication methods are disclosed. In an embodiment, the method includes producing a multilevel substrate panel by obtaining a base panel level containing prefabricated base structures and having a surface through which metallic surfaces of the prefabricated base structures are exposed. A secondary panel level is formed on the base layer to include patterned metal features embedded in a secondary dielectric body and electrically contacting the exposed metallic surfaces of the prefabricated base structures at a direct plated interface. The presingulated array of multilevel power substrates is separated into singulated multilevel power substrates each including a base substrate level formed from a singulated piece of the base panel level and a secondary substrate level formed from a singulated piece of the secondary substrate level.

Radio frequency packages containing multilevel power substrates and associated fabrication methods

A thermal interface structure for transferring heat from an electronic component to a system heat sink includes a stack of one or more layers of a stiff thermal interface material and one or more layers of a compliant thermal interface material stacked on and connected to the one or more layers of the compliant thermal interface material. In some embodiments, the thermal interface structure also may include one or more layers of a shape memory alloy and/or a collapsible encasement.

Thermal interface structures, electrical systems with thermal interface structures, and methods of manufacture thereof

Radio frequency (RF) packages containing substrates having coefficient of thermal expansion (CTE) matched mount pads are disclosed, as are methods for fabricating RF packages and substrates. In embodiments, the RF package contains a high thermal performance substrate including a metallic base structure, which has a frontside facing a first RF power die and a first die attach region on the frontside of the base structure. A first CTE matched mount pad is bonded to the metallic base structure and covers the first die attach region. The first CTE mount pad has a CTE greater than the CTE of RF power die and less than the CTE of the metallic base structure. An electrically-conductive bonding material attaches the RF power die to the first CTE matched mount pad, while RF circuitry integrated into first RF power die is electrically coupled to the metallic base structure through the mount pad.

Radio frequency packages containing substrates with coefficient of thermal expansion matched mount pads and associated fabrication methods

A substrate is described with a thermal dissipation structure sintered to thermal vias. In one example, a microelectronic module includes a recess between first and second substrate surfaces. One or more thermal vias extend between the first substrate surface and the interior recess surface, wherein each of the thermal vias has an interior end exposed at the interior recess surface. A sintered metal layer is in the recess and in physical contact with the interior end of the thermal vias and a thermal dissipation structure is in the recess over the sintered metal layer. The thermal dissipation structure is attached to the substrate within the recess by the sintered metal layer, and the thermal dissipation structure is thermally coupled to the thermal vias through the sintered metal layer.

Substrate with thermal vias and sinter-bonded thermal dissipation structure

Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

Microelectronic components having integrated heat dissipation posts and systems including the same

A packaged microelectronic component includes a substrate and a semiconductor die coupled to a top surface of the substrate. A method of attaching the packaged microelectronic component to a secondary structure entails applying a metal particle-containing material to at least one of a bottom surface of the substrate and a mounting surface of the secondary structure. The packaged microelectronic component and the secondary structure are arranged in a stacked relationship with the metal particle-containing material disposed between the bottom surface and the mounting surface. A low temperature sintering process is performed at a maximum process temperature less than a melt point of the metal particles to transform the metal particle-containing material into a sintered bond layer joining the packaged microelectronic component and the secondary structure. In an embodiment, the substrate may be a heat sink for the packaged microelectronic component and the secondary structure may be a printed circuit board.

Packaged microelectronic component mounting using sinter attachment

High thermal performance microelectronic modules containing thermal extension levels are provided, as are methods for fabricating such microelectronic modules. In various embodiments, the microelectronic module includes a module substrate having a substrate frontside and a substrate backside. At least one a microelectronic device, such as a semiconductor die bearing radio frequency circuitry, is mounted to the substrate frontside. A substrate-embedded heat spreader, which is thermally coupled to the microelectronic device, is at least partially contained within the module substrate, and extends to the substrate backside. A thermal extension level is located adjacent the substrate backside and extends away from the substrate backside to terminate at a module mount plane. The thermal extension level contains a heat spreader extension, which is bonded to and in thermal communication with the substrate-embedded heat spreader.

Microelectronic modules including thermal extension levels and methods for the fabrication thereof

Microelectronic systems having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the step or process of obtaining a microelectronic component from which a heat dissipation post projects. The microelectronic component is placed or seated on a substrate, such as a multilayer printed circuit board, having a socket cavity therein. The heat dissipation post is received in the socket cavity as the microelectronic component is seated on the substrate. Concurrent with or after seating the microelectronic component, the microelectronic component and the heat dissipation post are bonded to the substrate. In certain embodiments, the heat dissipation post may be dimensioned or sized such that, when the microelectronic component is seated on the substrate, the heat dissipation post occupies a volumetric majority of the socket cavity.

Microelectronic components having integrated heat dissipation posts, systems including the same, and methods for the fabrication thereof

A semiconductor device package includes an isolation wall located between a first circuit and a second circuit on a substrate. The isolation wall is configured to reduce inductive coupling between the first and second circuits during operation of the semiconductor device. Encapsulation material covers the substrate, first and second circuits, and the isolation wall. The isolation wall has features, such as indentation, along its upper edge that facilitate a flow of the encapsulation material across the isolation wall during fabrication to largely eliminate interior defects and/or visual defects on the surface of the completed semiconductor device package. For a dual-path amplifier, such as a Doherty power amplifier, the isolation wall separates the carrier amplifier elements from the peaking amplifier elements included within the semiconductor device package.

Semiconductor package with isolation wall

A semiconductor device, related package, and method of manufacturing same are disclosed. In at least one embodiment, the semiconductor device includes a radio frequency (RF) power amplifier transistor having a first port, a second port, and a third port. The semiconductor device also includes an output lead, a first output impedance matching circuit between the second port and the output lead, and a first additional circuit coupled between the output lead and a ground terminal. At least one component of the first additional circuit is formed at least in part by way of one or more of a plurality of castellations and a plurality of vias.

Growing community of inventors

Gilbert, AZ, United States of America

Lu Li