Yangtze Memory Technologies Co., Ltd.

Accelink Technologies Co., Ltd.

Lu Guo

Guangchang Ye

Xingwei Tang

Yuan Zhang

Boxuan Cheng

Hongchun Xu

Fei Liang

Qingyan Yue

Zhongchen Huo

Chaofan Xie

Dong Pan

An example of the present application discloses a memory device and operating method thereof, a memory system and operating method thereof, wherein the memory device includes: an array of memory cells; a peripheral circuit coupled to the array of memory cells and configured to: obtain a first result corresponding to a target location in the array of memory cells at an initial target read voltage; perform multiple adjustments to the initial target read voltage, and obtain the first result corresponding to the target location at the target read voltage after each of the adjustments respectively; determine a valley voltage in accordance with a plurality of the obtained first results.

Memory device and its operating method, memory system and operating method thereof

The present application provides a memory system, an operation method of a memory system, and a memory controller, and relates to the technical field of storage. In the solution provided by the present application, a memory comprises a plurality of blocks and at least one reserved block. Upon detecting a fail page among pages included in the plurality of blocks, a memory controller can acquire data in the fail page, and back up the data in the fail page to one backup page in the at least one reserved block.

Memory system, operation method of memory system, and memory controller

Examples of the present application disclose a memory device and operating method thereof, a memory system and operating method thereof, wherein the memory device includes: an array of memory cells; peripheral circuit coupled to the array of memory cells and configured to: obtain the first state corresponding to at least one code word formed by a preset number of memory cells at the target read voltage; perform multiple adjustments to the target read voltage, and obtain a first state corresponding to the at least one of the code words at the read voltage after each of the adjustments respectively; determine a valley voltage in accordance with a variation trend of the relationship of size between the number of flipped bits and the first preset value indicated by a plurality of the obtained first states.

Memory device and operating method thereof, memory system and operating method thereof

According to one aspect of the present disclosure, a memory device is provided. The memory device may include an array of memory cells, including a plurality of memory cells. A preset number of memory cells form a code word. The memory device may include peripheral circuit coupled to the array of memory cells. The peripheral circuit may be configured to obtain the first result corresponding to the code word at the target read voltage. The peripheral circuit may be configured to adjust the target read voltage in accordance with the first result corresponding to the code words at the target read voltage. The peripheral circuit may be configured to obtain the first result corresponding to the code words at the adjusted read voltage. The peripheral circuit may be configured to determine a valley voltage in accordance with a plurality of the first results.

A method can include performing a single-read operation at a read reference voltage to detect bits from memory cells. Dummy data is previously programmed into the memory cells. Original bits of the memory cells can be determined based on a default read reference voltage and known values of the dummy data. The detected bits and the original bits are compared to determine an upper-state failed bit count (FBC) corresponding to the memory cells having threshold voltages shifted from above the read reference voltage to below the read reference voltage and a lower-state FBC corresponding to the memory cells having threshold voltages shifted from below the read reference voltage to above the read reference voltage. When a difference between the upper-state FBC and the lower-state FBC being smaller than a threshold, the read reference voltage can be determined to be a best read reference voltage.

Dummy data-based read reference voltage search of NAND memory

A method for operating a memory is provided, including, for example, obtaining a set of read voltages, each of which can include an initial voltage value and an offset voltage value with a certain offset relative to the initial voltage value. The initial voltage value in each of the set of read voltages can be a preset read voltage for distinguishing two adjacent memory states of memory cells of the memory. The operating method can further include performing read operations respectively based on the initial voltage values and the offset voltage values, obtaining the quantity of memory cells in which a read result corresponding to each voltage value meets set conditions, determining a difference between the two quantities corresponding to every two adjacent voltage values belonging to the same set of read voltages, and determining an optimal read voltage for distinguishing the two adjacent memory states based on the difference.

Operating method for a memory, a memory and a memory system

The present disclosure provides a memory system for selecting from among a plurality of read retry routines based on metadata. The memory system can include one or more memory devices and a memory controller. The memory controller can also detect a failure of a read operation. The memory controller can also analyze a set of values that correspond to a set of effectors of the read operation. The memory controller can select one or more read retry routines from a plurality of read retry routines based on the analyzing. Each of the plurality of read retry routines can associated with a different effector from the set of effectors and a read voltage that corresponds to the different effector. The memory controller can also perform the selected one or more read retry routines at the portion of the one or more memory devices to negate the failure of the read operation.

Read retry method for enhancing read performance and stability of 3D NAND memory

Disclosed are an optical multiplexing and demultiplexing module having an automatic discovery function, comprising a signal transmission portion and a signal reception portion. The signal transmission portion transmits information about the optical multiplexing and demultiplexing module by modulating transmission power of a laser. The signal reception portion samples and decodes the received optical power signal to acquire information about the other optical multiplexing and demultiplexing modules borne thereon. In configuring a wavelength division multiplexing transmission system, the device of the present disclosure may simplify the complexity of manual configuration, improve the accuracy of configuration, reduce the cost and failure rate in a solution in which an individual transceiver is used as an automatic discovery function, and adapt to different connection modes. Thereby at a receiving terminal, a signal can not only be received by a demultiplexing input terminal but also be received by various multiplexing input terminals.

Optical multiplexing and demultiplexing module having automatic discovery function

A method and device for controlling a wavelength of a light emitting assembly. The device comprises a microcontroller, a light emitting assembly temperature control unit, an analog-to-digital converter, a digital-to-analog converter, a storage unit, a thermistor of a negative temperature coefficient in a TOSA component, and a TEC assembly. The microcontroller comprises an ADC input interface, a DAC output interface, a GPIO output interface, an external communication interface, and a memory interface. The light emitting assembly temperature control unit comprises a turn-off enable control circuit, a temperature detecting circuit, an error amplification-comparison-compensation unit, a TEC voltage/current limitation circuit, a TEC voltage/current detecting circuit, and a TEC differential voltage driver. The method and device are simple and flexible, implements a precise control of the wavelength, and also considers an adjustment function of the wavelength.

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Wuhan, China

Lu Guo