Commissariat a L'energie Atomique

Louise Peccoud

Barbara Charlet

Thierry Sindzingre

Francois Buiguez

Philippe Laporte

Bernard Bouyer

Alain Monfret

Sylvie Galzin

Bernard Andries

Guillaume Ravel

Guillermo Bomchil

The apparatus comprises a tight treatment enclosure (10), means (20,22) for the axial production of a carrier gas plasma, a solid plate (30) serving as an obstacle to the plasma and located perpendicular to the enclosure axis and downstream of the plasma production means, plasma diffusion means (40) located downstream of the obstacle plate, several non-ionized vector gas supply tubes (50) issuing axially into the enclosure beneath the diffusion means and all located in the same plane around the enclosure axis, a substrate carrier (56) positioned downstream of the vector gas supply tubes and perpendicular to the axis and annular pumping means (66,16) for the gaseous medium contained in the enclosure and positioned downstream of the substrate carrier.

Diffusion plasma-assisted chemical treatment apparatus

Process for etching by gas plasma

A method and apparatus for determining the impedance of the discharge in a plasma reactor system comprising a tuning box having variable capacitors is described. The impedance of the discharge is determined in dependence on a pre-established relationship between the operational positions of the variable capacitors on the one hand and the impedance of the discharge on the other. The ionic current relative to the discharge in the reactor also may be determined by taking into account the high frequency voltage of the reactor.

Process and apparatus for determining the impedance of the discharge in

Enclosure for the treatment of substrates by the reactive plasma method, consisting in a known manner of an inlet and an outlet (12) for the circulation of a reactive gas at low pressure, a base supporting the substrate (10) to be treated being placed between two electrodes, one of which (3) is at the ground potential and the other (4) or radio-frequency electrode is brought to an alternative potential such as to create an electrical discharge in the enclosure. It is characterized in that the enclosure is metallic and lined by plasma torch spraying with a protective coating (2) of alumina (Al.sub.2 0.sub.3) of a thickness of about 300 micrometers.

Enclosure for the treatment, and particularly for the etching of

The method consists in establishing the ion bombardment parameters, in varying a regulation parameter in order to initiate deposition, in measuring at each instant the total pressure drop within the vacuum chamber with respect to the initial pressure and in controlling the total pressure drop by controllably varying the regulation parameter.

Method and apparatus for controlling the deposition of films by reactive

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Claix, France

Louise Peccoud