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Semiconductor Components Industries, LLC

Imec

Louis Vacaresse

Guido V Groeseneken

Vincent De Heyn

Geert Gallopyn

Hugo Van Hove

Guido Groeseneken

Electrostatic discharge protection device comprising a first highly p-doped region with a base contact, a first highly n-doped region with a collector contact, a second highly n-doped region with an emitter contact and located between the first highly p-doped region and the second highly n-doped region, the first highly p-doped region and the second highly n-doped region being applied in a weakly p-doped region which a has a lateral overlap extending towards the first highly n-doped region, the lateral overlap having a width, the first highly n-doped region being applied in a weakly n-doped region, the weakly p-doped region and the weakly n-doped region being applied in a more weakly n-doped region, and a highly n-doped buried layer located underneath the more weakly n-doped region and extending below at least a portion of the weakly n-doped region and at least a portion of the weakly p-doped region. The device enables a lateral current component from the first highly n-doped region in the direction of the second highly n-doped region and a vertical current component from the first highly n-doped region via the buried layer in the direction of the second highly n-doped region. The width of the lateral overlap of the weakly p-doped region is determined in function of the predetermined ratio between the lateral current component and the vertical current component.

Layout configurable electrostatic discharge device for integrated circuits

Growing community of inventors

Toulouse, France

Louis Vacaresse