France Telecom

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L'etat Francais, Represente Par Le Ministre Des Postes Et

Etat Francais, Ministre Des Postes, Des Telecommunications Et De

France Telecom Etablissement Autonome De Droit Public

Centre National D'etudes Des Telecommunications

France Telecom-Establissement Autonome De Droit Public (Centre National D'e

Louis Menigaux

Louis Dugrand

Alain Carenco

Adrien Bruno

Pierre Sansonetti

Nouredine Bouadma

Andre Scavennec

A multi-wavelength laser-emitting component presenting a plurality of Bragg grating laser-emitting sources, wherein the Bragg gratings of said sources correspond to a diffraction grating common to the various sources, with the pitch thereof varying continuously from one source to another.

Multi-wavelength laser-emitting component

The present invention relates to a surface-emitting power laser, this laser comprises, on a semiconducting substrate, a plurality of elementary semiconductor stripe lasers, and means for reflecting along a direction perpendicular to the substrate, light generated by each of the elementary lasers.

Surface-emitting power laser and process for fabricating this laser

In a process for producing integrated structures having at least one cleaved optical guide, the following are successively epitaxied onto a planar surface of a monocrystalline substrate parallel to a plane of the substrate having crystal orientation &lt;1,0,0&gt;: an etching barrier layer for the substrate, a lower optical confinement layer, an active layer and an upper optical confinement layer. Then, the epitaxied layers are etched to form an optical guide strip having a portion oriented parallel to a first direction of crystal orientation &lt;0,1,1&gt; of the substrate.

Process for producing a structure integrating a cleaved optical guide

The invention relates to a process for producing a structure with integrated optical waveguide and mirror, comprising the stages consisting in:

Process for forming a structure with integrated optical waveguide and

An optoelectronic device having an optical guide and photodetector integrated on a common substrate is provided with a light coupling means for increasing the absorption of light within the photodetector. This means consists of freeing the lower portion of the guide layer--opposite the photodetector--to bring it into contact with air. The use of air has the effect of repelling the light propagating through the guide layer towards the absorbent layer of the photodetector thereby increasing the photodetector efficiency.

Optoelectronic device with integrated optical guide and photo-detector.

Method for making an integrated guide/detector structure made of a semiconductive material. This method consists of epitaxially growing on a semiconductor (2, 1) a lower confinement semiconductive film (4), a semiconductive guide film (6) and an upper semiconductive confinement film (8) with the same type of conductivity, the guide film being inserted between the confinement films having a prohibited band of energy smaller than that of the confinement films, of etching the upper film so as to form a guide strip with one extremity defining a first step (12) ending by a lateral broadening (28a) inside a plane parallel to the epitaxial films, of etching the released guide film so as to form a second step (16) adjacent to the first step, of epitaxially growing a semiconductive detector film (18) with this type of conductivity whose prohibited band of energy is smaller than that of the confinement films and the guide film, of eliminating that portion of the detective film covering the guide strip, and of forming the detector in the detecting film opposite the steps so as to embody a butt coupling between the guide film and the detector.

Method for making an integrated light guide detector structure made of a

A semiconductor device capable of producing a multiwavelength laser effect comprising a substrate having thereon at least two double heterostructure stacks, each stack comprising at least one active layer bounded by two confinement layers, the stacks being in the form of elongated strips disposed side-by-side, electrically insulated from each other. Each stack comprises a P-N junction therein which is individually and electrically operable and which is situated in the vicinity of an active layer of a different composition and rank in each stack. The transverse opposite ends of the strips are optically prepared and the upper surfaces of the strips form an upper surface for the device which is substantially flat.

Method of producing a quasi-flat semiconductor device capable of a

A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced. On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diffusion through a flat surface, a semiconductor device is obtained which is capable of a multi-wavelength laser effect, of which the different junctions are situated in a plane parallel with the base of the substrate.

A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different depths, e.g. CC4, CC3, CC2. The confinement layers initially receive contact layers (CP) made of P-type gallium arsenide. Regions R1, R2, and R3 are formed through the contact layers to constitute junctions with the uppermost active layers (respectively CA1, CA2, CA3). Valleys (V10, V21, V32) are formed to isolate the above-defined elementary stacks. After a metal contact layer has been formed, and after the end surfaces have been optically prepared, a multi-wavelength laser device is obtained.

Method of manufacturing a semiconductor structure suitable for producing

Process is disclosed for the production of a semiconductor laser with tape geometry and laser obtained by this process. After producing a double heterostructure on a substrate, a p-dopant is implanted in these layers, so that the two layers are made insulating. This is followed by local annealing by focussing an appropriate energy source. The electrical conduction properties of the annealed part are restored and it is doped. Thus, a p-doped conductive tape is produced between two electrically insulating parts above the active zone of the laser, which increases the current confinement in said zone. The disclosed invention is used in optical telecommunications.

Process for the production of a semiconductor laser with tape geometry

Process for the production of a monolithic integrated optical device

Process for manufacturing a semiconductor laser having a buried ribbon. After making a double heterostructure (2, 3, 4, 5) on a substrate (1), there is implanted in the contact layer (5) a p-type doping material, which has the effect of rendering it amorphous. The unit, except for a ribbon, is etched which leaves a mesa. A resumption of epitaxy makes it possible to bury the channel. This resumption does not lead to a crystalline growth on the upper surface of the contact layer, although the annealing that takes place during the resumption of epitaxy gives good ohmic contacts at the level of the implanted layer.

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Bures sur Yvette, France

Louis Menigaux