Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Louis Lim

Sung Mun Jung

Xiaoyu Chen

Pradeep Yelehanka

Dong Kyun Sohn

Siow Lee Chwa

Swee Tuck Woo

Chiew Wah Yap

Sripad Sheshagiri Nagarad

Hwa Weng Koh

Donghua Liu

Rachel Low

Nitin Kamat

An integrated circuit method for manufacturing an integrated circuit system including loading a wafer into a processing chamber and pre-purging the processing chamber with a first ammonia gas. Depositing a first nitride layer over the wafer and purging the processing chamber with a second ammonia gas. Depositing a second nitride layer over the first nitride layer that is misaligned with the first nitride layer. Post-purging the processing chamber with a third ammonia gas and purging the processing chamber with a nitrogen gas.

Integrated circuit system including nitride layer technology

A non-volatile memory cell includes an access and a storage transistor coupled in series. The memory cell is formed on a thin gate well tailored for transistors with thin gate dielectrics. The access transistor is a hybrid transistor which includes a gate with a thick gate dielectric layer formed on the thin gate well.

Non-volatile memory cell with a hybrid access transistor

Growing community of inventors

Singapore, Singapore

Louis Lim