Commissariat a L'energie Atomique Et Aux Energies Alternatives

Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Centre National De La Recherche Scientifique

Louis Hutin

Maud Vinet

Fabrice Nemouchi

Yves Morand

Cyrille Le Royer

Sylvain Barraud

Julien Borrel

Nicolas Posseme

François Lefloch

Benoit Bertrand

Yann-Michel Niquet

Xavier Jehl

Laurent Grenouillet

Frédéric Boeuf

Emmanuel Augendre

Sylvain Maitrejean

Raluca Tiron

Heimanu Niebojewski

Jean-Pierre Colinge

Tristan Meunier

Silvano De Franceschi

Thibaud Fache

Leo Bourdet

Ivan Duchemin

Giulia Usai

Maxime Moulin

Léo Bourdet

A quantum device includes a transistor pattern carried by a substrate, the transistor pattern having, in a stack, a gate dielectric and a superconducting gate on the gate dielectric. The superconducting gate has a base, a tip, sidewalls and at least one superconducting region made of a material that has, as a main component, at least one superconducting element. The superconducting gate also includes a basal portion having a dimension, taken in a first direction of a basal plane that is smaller than a dimension of the tip of the superconducting gate. The transistor pattern further includes at least one dielectric portion made of a dielectric material in contact with the top face of the gate dielectric and the basal portion of the superconducting gate.

Quantum device and method for producing the same

A method for producing a quantum device comprising providing a substrate having a front face and carrying at least one transistor pattern on the front face thereof, said transistor pattern comprising, in a stack a gate dielectric on the front face of the substrate, and a gate on the gate dielectric, said gate having a top and sidewalls. The method further includes forming a protective layer at the front face of the substrate, said protective layer being configured to prevent diffusion of at least one metal species in the substrate, forming a metal layer that has, as a main component, at least one metal species, at least on the sidewalls of the gate, said at least one metal species comprising at least one superconducting element, and forming a superconducting region in the gate by lateral diffusion of the at least one superconducting element from the sidewalls of said gate.

Method of making a quantum device

A method for making a quantum device including:

Method for making a quantum device with nuclear spin qubits

A method for manufacturing an electromechanical actuator includes providing a primary stack of layers comprising a monocrystalline layer, providing a secondary stack of layers, and forming, in the etching layer, at least three pads. The method further includes encapsulating the three pads by a first encapsulation layer, assembling the primary stack of layers with the secondary stack of layers, removing the first substrate, and forming a movable electrode in the monocrystalline layer.

Nanometric electromechanical actuator and method of manufacturing the same

A process for fabricating an electronic component incorporating double quantum dots and split gates includes providing a substrate surmounted with a stack of a semiconductor layer and of a dielectric layer that is formed above the semiconductor layer. The process also includes forming a mask on the dielectric layer and etching the dielectric layer and the semiconductor layer with the pattern of the mask, so as to form a stack of a semiconductor nanowire and of a dielectric hard mask. Finally, the process includes depositing a gate material on all of the wafer and carrying out a planarization, until the dielectric hard mask is reached, so as to form first and second gates that are electrically insulated from each other on either side of said nanowire.

Method for producing an electronic component with double quantum dots

A process for fabricating an electronic component with multiple quantum dots is provided, including providing a stack including a substrate, a nanostructure made of semiconductor material superposed over the substrate and including first and second quantum dots and a link linking the quantum dots, first and second control gate stacks arranged on the quantum dots, the gate stacks separated by a gap, the quantum dots and the link having a same thickness; partially thinning the link while using the gate stacks as masks to obtain the link, a thickness of which is less than that of the quantum dots; and conformally forming a dielectric layer on either side of the gate stacks so as to fill the gap above the partially thinned link. An electronic component with multiple quantum dots is also provided.

Method for manufacturing an electronic component having multiple quantum dots

Making a semiconductor-on-insulator substrate provided with an eddy current blocking structure () formed in a segment () doped according to doping of a first type, of doped regions () periodically distributed on one or more parallel rows and according to a pattern (M) and an improved arrangement.

RF substrate with junctions having an improved layout

A quantum device with spin qubits, comprising:

Quantum device with spin qubits coupled in modulatable manner

A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g&#xb7;&#x3bc;&#xb7;B&#x3e;min(&#x394;(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that &#x394;(Vbg)&#x3c;g&#xb7;&#x3bc;&#xb7;B+2|M|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Land&#xe9; factor, &#x3bc;corresponding to a Bohr magneton, &#x394; corresponding to an intervalley energy difference in the semiconducting portion, and Mcorresponding to the intervalley spin-orbit coupling.

Method for controlling a spin qubit quantum device

A method of fabricating an electronic component with multiple quantum islands is provided, including supplying a substrate on which rests a nanowire made of semiconductor material not intentionally doped, the nanowire having at least two main control gates resting thereon so as to form respective qubits in the nanowire under the two main control gates, the two main control gates being separated by a groove, top and lateral faces of the two main control gates and a bottom of the groove being covered by a dielectric layer; depositing a conductive material in the groove and on the top of the two main control gates; and planarizing down to the dielectric layer on the top of the two main control gates, so as to obtain an element made of conductive material self-aligned between the main control gates.

Method of manufacturing an electronic component including multiple quantum dots

An electronic component with multiple quantum islands is provided, including a substrate on which rests a nanowire made of semiconductor material not intentionally doped; two main control gates resting on the nanowire so as to form respective qubits in the nanowire, the two main control gates being separated by a groove, and bottom and lateral faces of the groove are covered by a dielectric layer; an element made of conductive material formed on the dielectric layer in the groove; a carrier reservoir that is offset with respect to the nanowire, the element made of the conductive material being separated from the carrier reservoir by another dielectric layer such that the element made of the conductive material is coupled to the carrier reservoir by field effect. A method of fabricating an electronic component with multiple quantum islands is also provided.

Electronic component with multiple quantum islands

Quantum device comprising: and wherein a width of the first lateral spacers is greater than that of the second lateral spacers.

Quantum device comprising FET transistors and qubits co-integrated on the same substrate

Quantum device with spin qubits

A method of fabrication, including the steps for supplying a substrate including a layer of semiconductor material covered by a sacrificial gate including a sacrificial gate insulator including a middle part, and edges covered by sacrificial spacers and having a thickness tox; removal of the sacrificial gate insulator and the sacrificial gate material; formation of a conformal deposition of thickness thk of dielectric material inside of the groove formed in order to form a gate insulator, with tox&#x3e;thk&#x2267;tox/2; formation of a gate electrode within the groove; removal of the sacrificial spacers so as to open up edges of the gate insulator layer; formation of spacers on the edges of the gate insulator layer on either side of the gate electrode, these spacers having a dielectric constant at the most equal to 3.5.

Method for fabrication of a field-effect with reduced stray capacitance

A process for manufacturing a Schottky barrier field-effect transistor is provided. The process includes: providing a structure including a control gate and a semiconductive layer positioned under the gate and having protrusions that protrude laterally with respect to the gate; anisotropically etching at least one of the protrusions by using the control gate as a mask, so as to form a recess in this protrusion, this recess defining a lateral face of the semiconductive layer; depositing a layer of insulator on the lateral face of the semiconductive layer; and depositing a metal in the recess on the layer of insulator so as to form a contact of metal/insulator/semiconductor type between the deposit of metal and the lateral face of the semiconductive layer.

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Saint Martin le Vinoux, France

Louis Hutin