Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Nxp B.v.

Fei Comapny

Philips Lumileds Lighting Company LLC

Louis Felix Feiner

Erik Petrus Antonius Maria Bakkers

Abraham Rudolf Balkenende

Pierre Hermanus Woerlee

Prabhat Agarwal

Martijn Henri Richard Lankhorst

Robertus Theodorus Fransiscus Van Schaijk

Michiel Jos Van Duuren

Antonio Calvosa

Niels De Jonge

Erik P A M Bakkers

The electric device () according to the invention comprises a layer () of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device () further comprises a set of nanowires (NW) electrically connecting a first terminal () of the electric device and the layer () of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer () of memory material to a second terminal () of the electric device. Each nanowire (NW) electrically contacts the layer () of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device () according to the invention.

Electric device with a layer of conductive material contacted by nanowires

The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire diameter of the at least one pre-fabricated nanowire by etching. The etching is induced by light which is absorbed by the at least one pre-fabricated nanowire. The spectrum of the light is chosen such that the absorption of the at least one pre-fabricated nanowire is significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter.

Fabricating a set of semiconducting nanowires, and electric device comprising a set of nanowires

A semiconductor device is provided in which energy band gap can be electrically varied. The device includes nanowires embedded in a material that exhibits a deformation when properly addressed, e.g., a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (A1N) or zinc oxide (Zn0). The nanowires can be reversibly strained by applying a local deformation to the piezoelectric material by applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g., a LED or a laser. Further, contact resistance in semiconductor junctions can be controlled, e.g., for use in memories and switches.

Semiconductor device with tunable energy band gap

The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material () in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

The invention provides an electron source suitable for use in a charged-particle apparatus, in which source a beam of electrons can be extracted from an electrode that is subjected to at least one of an electric potential, thermal excitation and photonic excitation, whereby at least part of the electrode comprises semiconductor material having a conduction band that is quantized into discrete energy levels. Such a source enjoys a relatively low energy spread, typically much smaller than that of a Cold Field Emission Gun (CFEG). The semiconductor material may, for example, comprise a semiconductor nanowire including InAs and GaInAs.

Electron source, and charged-particle apparatus comprising such an electron source

It has been found that devices for determining nuclear spin density distributions in an object by means of nuclear spin resonance measurements produce artefacts in the calculated density distributions. The artefacts occurring are dependent of the gradient magnetic fields which are used during the measurements and which influence the excited nuclear spin. The invention concerns two filters for elimination of the artefacts in dependence of the kind of modulation of the gradient magnetic field.

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Eindhoven, Netherlands

Louis Felix Feiner