L'etat Francais, Represente Par Le Ministre Des Postes Et

Etat Francais, Ministre Des Postes, Des Telecommunications Et De

Centre National D'etudes Des Telecommunications

France Telecom Etablissement Autonome De Droit Public (centre National

Louis Dugrand

Louis Menigaux

Rosette Azoulay

This process consists of depositing on a III-V or II-VI material (2) a mask layer (6), etching the latter in order to form therein openings (9) facing areas of the material on which epitaxy is to be carried out and then carrying out the epitaxy of the semiconductor layer (14) on said areas in an OMCVD frame by subjecting, at atmospheric pressure, the masked material simultaneously to vapours of chemical species of at least one III or II element and at least one V or VI element, as well as to vapours of HCl or at least one halide of a V or VI element, the elements III and V or II and VI of the chemical species and the halide being those which will form the semiconductor layer, said species being organometallic and/or hydrogen compounds. It is also possible, just prior to the epitaxy stage, to etch (12) the unmasked areas of the material, at atmospheric pressure, in the same frame as for the epitaxy using vapours of at least one halide of a III, V, II or VI element constituting the material to be etched.

Process for the selective epitaxy and etching of a III-V material in the

A semiconductor device capable of producing a multiwavelength laser effect comprising a substrate having thereon at least two double heterostructure stacks, each stack comprising at least one active layer bounded by two confinement layers, the stacks being in the form of elongated strips disposed side-by-side, electrically insulated from each other. Each stack comprises a P-N junction therein which is individually and electrically operable and which is situated in the vicinity of an active layer of a different composition and rank in each stack. The transverse opposite ends of the strips are optically prepared and the upper surfaces of the strips form an upper surface for the device which is substantially flat.

Method of producing a quasi-flat semiconductor device capable of a

A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced. On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diffusion through a flat surface, a semiconductor device is obtained which is capable of a multi-wavelength laser effect, of which the different junctions are situated in a plane parallel with the base of the substrate.

A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different depths, e.g. CC4, CC3, CC2. The confinement layers initially receive contact layers (CP) made of P-type gallium arsenide. Regions R1, R2, and R3 are formed through the contact layers to constitute junctions with the uppermost active layers (respectively CA1, CA2, CA3). Valleys (V10, V21, V32) are formed to isolate the above-defined elementary stacks. After a metal contact layer has been formed, and after the end surfaces have been optically prepared, a multi-wavelength laser device is obtained.

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Chelles, France

Louis Dugrand