Agate Logic, Inc.

Cswitch Corporation

Agale Logic, Inc.

Louis Charles Kordus, Ii

Vei-Han Chan

Antonietta Oliva

Narbeh Derharcobian

Narbeh Derhacobian

Colin Neal Murphy

Thomas E Stewart

Malcolm J Wing

Thomas Stewart, Jr

Phase change devices, particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. Structure allows application in which an electrical connection can be created between two active terminals, with control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals, allowing use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. Programming control can be placed outside of main signal path through the phase change device, reducing impact of associated capacitance and resistance of the device.

Multi-terminal phase change devices

A programmable logic device (PLD) provides voltage identification (VID) codes to a voltage regulator module having VID capabilities. The voltage regulator module generates supply Vdd and/or body bias Vbb voltages according to a selected VID code. The value of the supply Vdd and/or body bias Vbb voltages generated and applied to the PLD determine the operating characteristics of the PLD. The VID codes can be provided and stored in various ways: by an addressable lookup table (LUT) integrated with the PLD, by a memory device in which the VID codes are transferred from an external memory. The VID codes may also be self-generated by auto-detect circuitry integrated with the PLD. The ability to select a particular VID code for each individual PLD allows the user to optimize operational characteristics of the device to satisfy power and/or performance requirements.

Field-programmable gate array having voltage identification capability

Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.

Method for selectively establishing an electrical connection in a multi-terminal phase change device

A multi-terminal electromechanical nanoscopic switching device which may be used as a memory device, a pass gate, a transmission gate, or a multiplexer, among other things.

Multi-terminal electromechanical nanocsopic switching device with control and release electrodes

Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.

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Redwood City, CA, United States of America

Louis Charles Kordus, Ii