US Government As Represented by the Secretary of the Army

Louis C Poli

Robert A Lux

James F Harvey

Gerald J Iafrate

Thomas R Aucoin

Linda S Heath

J Robert Christian

Charles D Mulford, Jr

A pyramid shaped etch is made in an n or p type silicon substrate, or any symmetric etch with slanted edges, with p or n type implants in the slanted edges of the etch to form a PN junction. On this structure, an emitter and two collectors are formed by further implanting n+ regions in the PN junction region. To complete the device, ohmic contacts are formed to establish a base region. In operation, an appropriate bias is applied to the emitter through to the base and collectors. By so biasing the device, the device operates as a standard bipolar transistor. The currents of both the minority and majority carriers in the base region will respond to the component of the magnetic field perpendicular to the face of the slanted etch. As a result, there will be a difference in the currents in the collectors. These currents can then be simply calibrated to measure the magnetic field component. By forming similar sensors on 3 or 4 of the faces of the etched structure all three components of the magnetic field can be computed.

Microelectronic 3D bipolar magnetotransistor magnetometer

A multi-terminal Group III-V semiconductor high electron mobility field effect transistor comprised of a sandwich of molecular beam epitaxially grown layers and including two high mobility charge flow channels in respective two dimensional electron gas regions implemented, for example, by at least one doped layer of aluminum gallium arsenide adjacent an undoped gallium arsenide layer separated by a heterojunction. A pair of opposing two dimensional electron gas (2DEG) regions are generated in the layer of undoped gallium arsenide by the bending of the energy levels of the semiconductor materials. Charge flow occurs in a unidirectional fashion from one channel to the other in the common undoped gallium arsenide layer under the control of an electric field applied transversely through the structure by means of a top gate electrode and a bottom field plate electrode. Alternatively, the source voltage can be increased until the requisite amount of energy has been provided for the electrons to become 'hot' enough to transfer from one channel to the other, in which case a lower biasing contact is not required. Relatively high signal isolation is inherently provided thereby between a pair of output terminals or signal ports. The device, moreover, is operable as a high speed signal coupler, amplifier, mixer as well as a photoelectric detector/amplifier.

Dual channel high electron mobility field effect transistor

A covert line of sight time division multiple access communications system omprised of a plurality of geographically separated transceivers consisting of identical hardware and capable of operating either as a master station or a slave station, and when desirable as a repeater station. The system operates with a non-committed master station operating within a predetermined power circle of operation whereby multiple slave stations and/or repeaters communicate with each other by way of the master station in a one half duplex mode at a single frequency in the millimeter wave frequency range between 54 and 58 GHz.

Time division multiple access communications system

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Hazlet, NJ, United States of America

Louis C Poli