Infineon Technologies Ag

Samsung Electronics Co., Ltd.

Lothar Doni

Hermann Wendt

Seok-Gyu Lee

Chong Kwang Chang

Sang Jine Park

Marcus Culmsee

Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing system that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.

Processing systems and methods for semiconductor devices

Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing method that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.

A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used as a gate sidewall spacer to block at least some dopants from an integrated circuit substrate beneath the gate sidewall spacer. Moreover, a single mask may be used when fabricating source and drain extension regions and source and drain regions of an integrated circuit transistor.

Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer

To form a semiconductor device, a silicon (e.g., polysilicon) gate layer is formed over a gate dielectric and a sacrificial layer (preferably titanium nitride) is formed over the silicon gate layer. The silicon gate layer and the sacrificial layer are patterned to form a gate structure. A spacer, such as an oxide sidewall spacer and a nitride sidewall spacer, is formed adjacent the sidewall of the gate structure. The semiconductor body is then doped to form a source region and a drain region that are self-aligned to the spacers. The sacrificial layer can then be removed selectively with respect to the oxide sidewall spacer, the nitride sidewall spacer and the silicon gate. A metal layer (e.g., nickel) is formed over the source region, the drain region and the silicon gate and reacted with these regions to form a silicided source contact, a silicided drain contact and a silicided gate.

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Villach, Austria

Lothar Doni