Infineon Technologies Ag

Lothar Brencher

Georg Seidemann

Dirk Meinhold

Michael Hartenberger

Uwe Rudolph

Wolfgang Dickenscheid

Wolfgang Dickenscheld

Michael Renner

Maik Stegememann

Carsten Moritz

According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.

Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer

A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being is different from the second etchant.

Device and method for stopping etching process

Embodiments provide a method for removing a dielectric layer from a bottom of a trench while maintaining the dielectric layer on sidewalls of the trench. The method includes etching the dielectric layer at the bottom of the trench and generating a passivation layer on the dielectric layer at an upper portion of the trench by adjusting the conditions of a plasma etch process to a first mode; and a step of etching the dielectric layer at the bottom of the trench and etching the passivation layer at the upper portion of the trench by adjusting the conditions of the plasma etch process to a second mode before the dielectric layer at the bottom of the trench is completely removed.

Method for removing a dielectric layer from a bottom of a trench

A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being different from the second etchant.

Device and method for stopping an etching process

The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first mask layer ( ) and an underlying second mask layer ( ) is used. A resist mask is applied to the mask layers ( ). The trenches are structured by etching processes, in which, in a first etching process, the first mask layer ( ) is etched selectively with respect to the resist mask, and in a second etching process, the second mask layer ( ) is etched selectively with respect to the first mask layer ( ).

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Radeberg, Germany

Lothar Brencher