Micronas Gmbh

Itt Industries, Inc.

Deutsche Itt Industries Gmbh

Other

Micronas Intermetall Gmbh

Deutsche Itt Industreis Gmbh

Lothar Blossfeld

Ralf Janke

Mario Motz

Ulrich Theus

Soenke Mehrgardt

Wolfgang Kraft

Christoph Volz

In detecting the time at which a rotating object passes a given angular position, a value range of an angular position sensor output signal which varies relatively rapidly with angular position acts as a trip threshold that, when exceeded, indicates the object has achieved the detected angular position. A relatively rapid change as a function of angular position is determined by reference to the functional dependence of the detection signal level on the angular position of the object. Assuming the sensor signal varies sinusoidally with the object's angular position, the ranges in which the level of the sensor output signal varies rapidly with angular position lie in the vicinity of the angular positions at which the sensor output signal crosses its own mean value, the threshold value being chosen near this mean value.

Device and method for detecting an angular position of a rotating object

A method of processing a pulse train output signal provided by a non-contact sensor that senses the rotational speed and angular position of a rotating wheel includes comparing the amplitudes of the pulses with a variable switching threshold value, and adjusting the value of the variable switching threshold value if the difference between the amplitudes of two successive pulses exceeds a maximum value.

Technique for sensing the rotational speed and angular position of a rotating wheel

To measure a physical parameter, a two-wire sensor produces pulse-width modulated signals (PWM) whose pulse width is preferably modulated as a function of the physical parameter to be measured. To indicate an error or a malfunction, the two-wire sensor provides an error signal with a specifiable pulse-width ratio that is preferably 1:1, while asymmetric pulse-width ratios are provided for the measurement signals (PWM). To measure a physical parameter that assumes only one of two states or values, the two-wire sensor produces a first measurement signal with a specifiable asymmetric pulse-width ratio and a second measurement signal formed by inversion of the first measurement signal. A plurality of two-wire sensors can for example be connected to a common two-wire line and operated in time-multiplex mode.

Two-wire sensor for measuring a physical parameter

A technique for determining an offset-reduced Hall voltage (Uh), and/or an offset voltage (UH, offset) of a Hall sensor () includes applying a Hall sensor current (I) at first and second taps (a, a, a) of the Hall sensor (), and determining a first Hall voltage (Uh) at third and fourth taps (a, a) displaced from the first and second taps (a, a, a). A second Hall sensor current is applied modified relative to the first, and a second Hall voltage (Uh) is determined. The Hall voltage (Uh) and/or Hall voltage offset (Uh,offset) are determined from the first and second Hall voltages. To compensate any offset present, a second measurement applies the second Hall sensor current I at taps (a, a) that are spatially displaced relative to the first and/or second taps.

Offset-reduced hall sensor

To detect the rotational speed and angular position of a rotating wheel, a non-contact sensor (e.g., an optical sensor or a Hall sensor) scans scan marks on the wheel, and generates a pulse train. The amplitude of the pulses is compared in a comparator with a variable switching threshold. To achieve accurate measurement results, and to compensate for offset and long-term drift of the sensor, the switching threshold is adjusted if one or more of the following conditions is met: (i) the difference between the pulse amplitude and the switching threshold exceeds a fixable first maximum, (ii) the difference of the amplitudes of two successive pulses exceeds a fixable second maximum, (iii) the difference of the frequencies of successive pulses exceeds a fixable third maximum. The method is particularly advantageous in a motor vehicle, to detect the rotational speed and angular position for an electronic ignition system, or the rotational speed and angular position of the wheels for an ABS braking system, an anti-skid system, or a vehicle stabilization system.

Technique for sensing the rotational speed and angular position of a rotating wheel using a variable threshold

The invention relates to an integrated circuit with a single sensor element () for converting a physical variable into an electrical signal, comprising a comparator unit () by which means the electrical signal of the sensor element () can be compared with various different threshold values in order to produce different discreet circuit states and an output unit () for outputting an output signal representing the different discreet circuit states or the comparator unit (). The threshold values of the comparators of the comparator unit () are stored in a storage unit of the integrated circuit in such a way that they can be regulated with a control device (). The integrated circuit has a single output terminal () on which the various circuit states of the electrical signal can be picked off in code.

Integrated circuit with a sensor element for providing an encoded output signal

Two-wire sensors for measuring physical quantities have only two connections (A , A ), which serve to connect the power supply and also to conduct the measuring signals. However, because two-wire sensors have the property of controlled current sources, they can be connected only in parallel. Consequently, for a parallel circuit of n two-wire sensors disposed at different locations, two n lines are required. To reduce the number of lines, a two-wire sensor is provided with an end stage (W), which generates an output voltage (UA), which is a measure of the physical quantity measured by a measuring sensor (S) and which is always greater than an adjustable reference voltage signal (Uref). Because the inventive two-wire sensor therefore has the property of a voltage source, several of them can be connected in series. Consequently, even for a series circuit of several two-wire sensors, only two lines are required.

Two wire sensor device

A sensor module ( ) is constructed as a solid state integrated circuit (IC) and has a sensor ( ) as well as at least one measuring amplifier ( ), wherein the sensor module has external connections at least for the power supply and for the output measurement signal. In the sensor module an evaluation circuit ( ) is provided that is connected to at least one internal measurement point of the circuit. The evaluation circuit ( ) is connected to a modulator ( ) for modulation of the supply current and/or the supply voltage and/or the output measurement signal, in order to output a diagnostic signal, which is formed from an internal circuit measurement value, via the available external connections of the sensor module.

Process for monitoring the function of a sensor module and a sensor module to perform the process

A system for processing a signal s(t) from a sensor to recover sensed signal information within the bandwidth of the summation signal, wherein the signal s(t) includes a sensed signal m(t) and an offset signal having a first frequency f,. The system comprises: a sampling device for sampling the signal s(t) at a second frequency f,that is a multiple of the first frequency f,, to create a sequence of sampled values; and an averaging device for averaging the sequence of sampled values to provide a sequence of averaged sampled values indicative of the sensed signal m(t).

Method and apparatus for processing a measurement signal

A sensor device is disclosed having a controller (9) which defines at least a first operating state (b1) and a second operating state (b2), the first operating state being preferably triggerable by application of a supply voltage (U.sub.B). A setting facility (5) adapts the operating range of a measuring facility (2) quickly to the respective DC level (s0) of a sensor signal (s1) in the first operating state (b1), and determines a mean sensor signal value (sm) for tracking purposes in the second operating state (b2). An output circuit (4) provides a first output signal (s3) independent of the sensor signal (s1) in the first operating state and a second output signal (s4) dependent on the superposed sensor signal (s2) in the second operating state (b2).

Sensor device

A programmable switching threshold sensor including a sensing element having its measurement output terminals connected to a comparator, a current-signal generator, for generating a reference current signal changing in steps. An encoding unit has a code assignable corresponding to the values of the reference current signal. A memory unit is connected to the encoding unit for transferring and storing the code. The reference current signal is coupled to the comparator for comparison with measurement output signals from the sensing element. The output of the comparator is coupled to the memory unit for applying an enable signal permitting the transfer of the code, and a control unit for controlling the signal generator and the encoding unit. The reference signal is a current signal or a voltage signal, depending on the corresponding sensing element and the evaluating circuit used.

Sensor with a programmable switching threshold

The invention relates to a monolithic integrated sensor circuit, fabricated in CMOS technology, in which the circuit implemented on the semiconductor chip is connected to the ground connection via the substrate of the semiconductor chip, and in which the input signals are not referred to the potential of the ground connection.

Monolithic integrated sensor circuit in CMOS technology

In a CMOS circuit having at least a first subcircuit coupled between a first point of potential and a first circuit node, and having a second subcircuit coupled between a second circuit node and a second point of potential, said first and second circuit nodes being coupled together, the improvement in combination therewith, comprising: first circuit means coupled to the first point of potential for converting the first potential to a third potential as a function of the magnitude of said first potential, said third potential being of a value inbetween the first and second potentials; a FET having source, drain, gate and well terminals, said source terminal being coupled to said well terminal and to said first circuit node, said third potential being applied to said gate terminal, said drain terminal being coupled to said second circuit node; wherein said FET, in conjunction with said first circuit means, operates to selectively provide a difference in potential between said first and second circuit nodes, thereby preventing voltage breakdown within said subcircuits.

CMOS circuit with increased breakdown strength

A polarity-reversal protection device for integrated circuits, comprising a substrate of a first conductivity type; a well region of a second conductivity type opposite said first conductivity type, within said substrate; a field effect transistor having drain and source regions within said well of said first conductivity type, said drain region being connectable to external circuitry to be protected from polarity reversal of a supply voltage, said supply voltage being applied to said source region via a low impedance; and resistor means, coupled to said well region, for enabling said supply voltage to be applied therethrough to said well region, said resistor means operative to sink current during undesirable polarity reversal of the supply voltage, thereby preventing damage to the external circuitry and to the FET itself.

Polarity-reversal protection for integrated electronic circuits in CMOS

For improved offset compensation, a Hall sensor is provided with a device for orthogonally switching the Hall detector supply current and the Hall-voltage taps. A summing device determines an offset-compensated Hall-voltage value from first and second predetermined Hall-voltage values. The Hall-voltage values are formed by means of a Hall detector containing at least first and second Hall cells for offset-voltage precompensation. The first and second Hall cells are identical and are orthogonally switchable. The geometrical orientation of the first and second Hall cells includes an angle other than 0.degree. and 180.degree..

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Breitnau, Germany

Lothar Blossfeld