Micron Technology Incorporated

Semiconductor Components Industries, LLC

Aptina Imaging Corporation

Loriston Ford

Ulrich C Boettiger

Jin Li

Jiutao Li

Brian A Vaartstra

Swarnal Borthakur

Mattia Cichocki

Bartosz Piotr Banachowicz

Jeffrey Mackey

Mitchell J Mooney

Rick Holscher

A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.

Color filter array, imagers and systems having same, and methods of fabrication and use thereof

An image sensor may include optically black pixels for obtaining dark current measurements. The image sensor may include dummy pixels between the active pixel array and the optically black pixels. Light incident upon the dummy pixels may be redirected to the optically black pixels, causing inaccurate dark current measurements. Light-blocking structures may be provided in the dummy pixels to prevent light from reaching the optically black pixels. A grid of openings may be formed in the active pixel array and the dummy pixel area. The grid may be filled with color filters in the active area and light-blocking elements in the dummy pixel area. The dummy pixel area may include a single opening in the grid in which a single light-blocking element that covers multiple dummy pixel photodiodes is formed. Light-blocking structures in the dummy pixel area may extend over the optically black pixels.

Image sensors with optically black pixels

Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.

Dielectric barriers for pixel arrays

Imager devices are formed with light block material between microlenses to enhance the characteristics of image acquisition. The light block material may be deposited over the lenses, and then partially removed to expose central portions of the lenses. The invention is applicable to, among other things, imager devices having pixel arrays formed with the light block material and integrated with one or more processing components in a semiconductor device.

Light block for pixel arrays

A microlens structure includes lower lens layers on a substrate. A sputtered layer of glass, such as silicon oxide, is applied over the lower lens layers at an angle away from normal to form upper lens layers that increase the effective focal length of the microlens structure. The upper lens layers can be deposited in an aspherical shape with radii of curvature longer than the lower lens layers. As a result, small microlenses can be provided with longer focal lengths. The microlenses are arranged in arrays for use in imaging devices.

Layered lens structures and methods of production in which radius of curvature of the upper lens can be varied

Methods of fabricating layered lens structures

Layered microlens structures and devices

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Nampa, ID, United States of America

Loriston Ford