Stmicroelectronics S.r.l.

Lorenzo Vinciguerra

Roberto Carminati

Massimiliano Merli

Nicolo' Boni

Carla Maria Lazzari

Irene Martini

Davide Assanelli

Paolo Ferrarini

Nicolò Boni

A MEMS device is formed by a body of semiconductor material which defines a support structure. A pass-through cavity in the body is surrounded by the support structure. A movable structure is suspended in the pass-through cavity. An elastic structure extends in the pass-through cavity between the support structure and the movable structure. The elastic structure has a first and second portions and is subject, in use, to mechanical stress. The MEMS device is further formed by a metal region, which extends on the first portion of the elastic structure, and by a buried cavity in the elastic structure. The buried cavity extends between the first and the second portions of the elastic structure.

MEMS device having an improved stress distribution and manufacturing process thereof

A piezoelectric transducer includes a semiconductor body with a bottom electrode of conductive material. A piezoelectric element is on the bottom electrode. A first protective layer, on the bottom electrode and the piezoelectric element, has a first opening through which a portion of the piezoelectric element is exposed, and a second opening through which a portion of the bottom electrode is exposed. A conductive layer on the first protective layer and within the first and second openings is patterned to form a top electrode in electrical contact with the piezoelectric element at the first opening, a first biasing stripe in electrical contact with the top electrode, and a second biasing stripe in electrical contact with the bottom electrode at the second opening.

Method of manufacturing a stacked piezoelectric transducer, and piezoelectric transducer

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Novara, Italy

Lorenzo Vinciguerra