Atmel Corporation

Stmicroelectronics S.r.l.

Sgs-thomson Microelectronics S.r.l.

Microchip Technology Inc.

Stmicroelectrics S.r.l.

Lorenzo Bedarida

Simone Bartoli

Massimiliano Frulio

Giorgio Oddone

Antonino Geraci

Mauro Luigi Sali

Stefano Sivero

Andrea Sacco

Fabio Tassan Caser

Mirella Marsella

Vincenzo Dima

Gabriele Pelli

Giovanni Campardo

Danut Manea

Carlo Lisi

Mauro Chinosi

Davide Manfre′

Emmanuel Racape

Andrea Silvagni

Giuseppe Fusillo

Marco Sforzin

Emanuele Confalonieri

Sheng Huang

Antonio Russo

Donato Ferrario

Riccardo Riva Reggiori

Maria Mostola

Xiaobao Wang

Stefano Surico

Albert Weiner

Marco Defendi

Monica Marziani

Luigi Bettini

Giorgio Bosisio

Sabina Mognoni

Antonio Geraci

Nicolas Zammit

Andrea Bettini

Andrea Bellini

Steve Schumann

Alex Pojer

Davide Manfre'

Alberto Campisi

Riccardo Riva-Reggiori

Massimo Zucchinali

Andrea Corradi

Edward Shue-Ching Hui

Fabio Disegni

Luca Vandi

Francesco Brani

Fabio T Caser

A memory device, memory address decoder, a memory system and related method for memory attack detection are disclosed. An apparatus includes a memory decoder include multiple stages in a decoding path configured to generate a select signal from an input address signal, and fault detecting logic operably coupled with the memory decoder and configured to receive feedback signals distributed from the multiple stages indicative of a fault along the decoding path.

Memory device, memory address decoder, system, and related method for memory attack detection

A sense amplifier measures a state of a memory cell coupled to a sense node. The sense amplifier receives a control signal to enable the sense amplifier. The sense amplifier generates a voltage based on an amplifier current that is based on a sense current flowing through the sense node. The sense amplifier generates a feedback current based on the voltage to compensate variations of the sense current. The sense amplifier receives a reference control signal to enable a reference circuit to generate a reference current. The sense amplifier provides an output based on a result of comparing the sense current with the reference current, the output representing the state of the memory cell.

Sense amplifier

A decoder circuit includes high voltage and low voltage transistors. The decoder circuit uses the high voltage transistors during modify operations to provide a high voltage, e.g., a boosted voltage, to memory cells to change memory cell status or perform other operations. The decoder circuit uses the low voltage transistors during read operations.

Memory decoder circuit

A sense amplifier includes a first cascode transistor, a second cascode transistor, a first feedback circuit, a second feedback circuit, and a comparator. The drain of the first cascode transistor is connected directly to a first voltage source. The gate of the first cascode transistor is connected to the first feedback circuit and a first input of the comparator, and the source of the first cascode transistor is connected to the first feedback circuit and a first column decoder. The drain of the second cascode transistor is connected directly to a second voltage source. The gate of the second cascode transistor is connected to the second feedback circuit and a second input of the comparator, and the source of the second cascode transistor is connected to the second feedback circuit and a second column decoder.

A method and system for protecting a memory having a plurality of blocks from modification is disclosed. The method and system include providing a plurality of one time programmable (OTP) cells and OTP cell logic coupled with the OTP cells. An OTP cell of the plurality of OTP cells corresponds to a portion of a block of the plurality of blocks. The OTP cell allows modification of the portion of the block when the OTP cell is in a first state and permanently prevents modification of the portion of the block when the OTP cell is in a second state. The OTP cell logic uses the plurality of OTP cells to select the portion of the block as corresponding to the OTP cell. This portion of the block is write protected when the OTP cell is placed in the second state.

Flexible OTP sector protection architecture for flash memories

A precharge and evaluation circuit for a memory sense amplifier includes a first precharge-phase transistor having a source coupled to a power-supply potential, a gate coupled to a precharge control line, and a drain. A second precharge-phase transistor has a drain coupled to the drain of the first precharge-phase transistor, a source, and a gate coupled to the source through a feedback circuit. A first read-phase transistor has a source coupled to the power-supply potential, and a gate and drain coupled to a comparator. A second read-phase transistor has a drain coupled to the drain of the first read-phase transistor, a source coupled to the source of the second precharge-phase transistor, and a gate coupled to the source of the second read-phase transistor through a feedback circuit. A column decoder is coupled to the sources of the second precharge-phase and second read-phase transistors.

Precharge and evaluation phase circuits for sense amplifiers

A sensing circuit with current offset functionality. In one embodiment, the sensing circuit includes a memory circuit having a first offset circuit operative to offset a first current. The sensing circuit also includes a reference circuit coupled to the memory circuit, where the reference circuit includes a second offset circuit operative to offset a second current. The sensing circuit also includes a compare circuit coupled to the memory circuit and the reference circuit, where the compare circuit determines the state of a memory cell based on first current and the second current. According to the system disclosed herein, the first and second offset circuits optimize the performance of the sensing circuit and prevent errors when determining the state of the memory cell.

Compensated current offset in a sensing circuit

In an embodiment, a non-volatile memory array wherein narrow word lines, as small as the minimum feature size width F, in separate strings, are extended outwardly from a non-volatile memory array and joined by wider connector segments. The joined word lines provide new opportunities. First, metal straps that can be formed to overlie the word lines can be joined by metal connector segments to the word lines. The connector segments can serve as an interface between the polysilicon word lines and the metal straps. Two adjacent word lines in the same string share a single metal strap using these segments thereby reducing the overall number of segments and contacts in the array. Increased width of the polysilicon joinder segments joining word lines in different strings, provides the opportunity for widening the connection beyond the minimum feature size so that contact may be readily made between the metal straps and the polysilicon word lines. Second, the joined word lines require fewer row decoder circuits. One row decoder is provided for each joined set of word lines.

Non-volatile memory array architecture with joined word lines

A sensing circuit. In one embodiment, the sensing circuit includes a memory circuit including a first bitline that sinks a first leakage current, a compensation device coupled to the memory circuit, and a compensation circuit coupled to the compensation device. The compensation circuit includes a second bitline that sinks a second leakage current that matches the first leakage current. The compensation device is operative to compensate the first leakage current through a current based on the second leakage current. According to the system and method disclosed herein, the compensation device and compensation circuit prevents errors when determining the state of the memory cell.

Column leakage compensation in a sensing circuit

A memory system is disclosed. In one embodiment, the memory system includes a first bitline, where the first bitline produces a first transient current. The memory system also includes a sense amplifier coupled to the first bitline. The memory system also includes a second bitline coupled to the sense amplifier, where the second bitline produces a second transient current that is equal to the first transient current. The sense amplifier enables the first and second transient currents to be canceled. According to the system disclosed herein, the state of a memory cell may be determined without being adversely affected by transient currents.

Sense architecture

A current mirror circuit includes a first current-mirror transistor coupled to a second current-mirror transistor. A load is coupled to the second current-mirror transistor. A first current source is coupled to the first current-mirror transistor to cause a bias current to flow through the first current-mirror transistor and a second current source is coupled to the second current-mirror transistor and in parallel with the load to shunt the bias current away from the load.

Biasing current to speed up current mirror settling time

A system and method for reducing soft-writing in a multilevel flash memory during read or verify includes a memory cell. A first and second reference cells are coupled to the memory cell and are configured to receive a first and a second voltage. A current comparison circuit is coupled to the first and second reference cells and to the memory cell and is configured to compare current flow through the memory cell with current flow through the first and second reference cells, and to determine whether the memory cell holds a first range of values while the first reference cell receives the first voltage, and if the memory cell does not hold the first range of values, to determine whether the memory cell holds a second range of values while the second reference cell receives the second voltage, thereby reducing soft-writing during the read operation.

Method and system for reducing soft-writing in a multi-level flash memory

A sense amplifier circuit for reading the state of memory cells. In one aspect of the invention, the sense amplifier circuit includes a first stage receiving a cell current derived from the memory cell and a reference current derived from a reference cell, and a second stage receiving the cell current and the reference current. A comparator, coupled to the first stage and the second stage, provides an output indicative of the state of the memory cell based on a difference of the voltages provided by the first stage and the second stage, where the state indicated by the comparator is substantially unaffected by capacitive current components provided by transient behavior of the first and second stages.

Sense amplifier with stages to reduce capacitance mismatch in current mirror load

A method and apparatus for discharging a memory cell in a memory device. In one implementation, the memory cell includes a capacitor having a first plate and a second plate, and the method includes initially discharging the first plate of the capacitor through a first discharge circuit and discharging the second plate of the capacitor through a second discharge circuit. After the initial discharge, the method further includes completely discharging the first plate of the capacitor and the second plate of the capacitor by coupling both the first plate of the capacitor and the second plate of the capacitor to ground.

Method and apparatus for discharging a memory cell in a memory device after an erase operation

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Vimercate, Italy

Lorenzo Bedarida