Alcatel Lucent

Lucent Technologies Inc.

At&t Bell Laboratories

Alcatel-lucent USA Inc.

Bell Telephone Laboratories

Agere Systems Inc.

American Telephone & Telegraph Co., At&t Bell Laboratories

Agere Systems Guardian Corp.

American Telephone and Telegraph, Co.

Loren Neil Pfeiffer

Kenneth William West

Kirk William Baldwin

Robert L Willett

Horst L Stormer

Yiu-Huen Wong

Terrence Kovacs

Michael James Manfra

Jorge Manuel Garcia

Thomas L Koch

Timothy D Harris

Arthur C Adams

Yasuo Kokubun

Michel A Duguay

Mark Lee

Hidefumi Akiyama

Allen P Mills, Jr

Joel Hasen

Werner H Wegscheider

David Gershoni

Joseph Spector

James P Eisenstein

An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.

Quantum well device

Apparatus comprising surface site comprising substantially inorganic surface having chemical composition selected from group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within polypeptide bonding region and having selective bonding affinity for polypeptide; plurality of interlayers between which surface site is interposed; distal site end on surface site and distanced from interlayers, the surface being provided on distal site end; surface site and interlayers being interposed between first and second supports; first and second conductors provided on first and second supports and having respective first and second distal conductor ends positioned within polypeptide bonding region; conductors being capable of applying external voltage potential across polypeptide bonding region. Apparatus, optionally comprising such first and second supports and conductors; and comprising third conductor in electrical communication with surface site, the third conductor positioned for electrical communication with source of an external bias voltage. Techniques for making apparatus.

Detection apparatus for biological materials and methods of making and using the same

Method that includes providing plurality of test sites each having first and second layers respectively including inorganic first and second surface sites forming parts of interior of a well, the surface sites having positions and thicknesses being configured for locating thereon portions of unidentified amino acid-containing molecules; exposing each of a first plurality of the test sites to a fluid containing a different one of plurality of pre-identified amino acid-containing molecules and determining bonding signatures onto each of first plurality of test sites; exposing each of second plurality of test sites to another fluid containing unidentified amino acid-containing molecule and determining bonding signatures onto second plurality of test sites; and comparing bonding signatures to determine or exclude identity of unidentified amino acid-containing molecule.

An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

Interfering excitations in FQHE fluids

A method includes an act of providing a crystalline substrate with a diamond-type lattice and an exposed substantially (111)-surface. The method also includes an act of forming a graphene layer or a graphene-like layer on the exposed substantially (111)-surface.

Devices with graphene layers

Apparatus comprising a surface site comprising a substantially inorganic surface having a chemical composition selected from the group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site is interposed; a distal site end on the surface site and distanced from the interlayers, the surface being provided on the distal site end; the surface site and the interlayers being interposed between first and second supports; first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; the conductors being capable of applying an external voltage potential across the polypeptide bonding region. Apparatus, optionally comprising such first and second supports and conductors; and comprising a third conductor in electrical communication with the surface site, the third conductor positioned for electrical communication with a source of an external bias voltage. Techniques for making apparatus.

An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate. The hexagonal BN layer has a surface region substantially lattice-matched to graphene, and step (b) includes epitaxially forming at least one graphene layer on the surface region of the hexagonal BN layer. Applications to FETs are described.

Method of making devices including graphene layers epitaxially grown on single crystal substrates

Devices including graphene layers epitaxially grown on single crystal substrates

An MBE effusion cell is configured to produce an inverted temperature gradient; that is, the top surface of the melt is not cooler than the bottom surface of the melt. In one embodiment, the MBE effusion cell comprises a crucible having tip, central and base regions. First filaments are located laterally adjacent the tip region; second filaments are located laterally adjacent the central region; and third filaments are located laterally adjacent all three of the regions. The radial density of the number of the heater filaments is lower adjacent the base region than adjacent the tip or central regions. In another embodiment, further tailoring of the inverted temperature gradient is obtained by reducing the amount of insulation at the base of the crucible. In another embodiment, at least one heater filament extends substantially along the longitudinal axis of the crucible and is located adjacent its lateral wall. Dielectric annular spacers are located around the lateral wall and are distributed along the longitudinal axis. The spacers having a multiplicity of holes through which the filaments pass. The filaments and spacers are located within a gas-blocking enclosure.

Effusion cell and method for use in molecular beam deposition

Apparatus comprising a surface site layer having a distal site end, wherein the distal site end includes a substantially inorganic surface having a chemical composition selected from a group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site layer is interposed, wherein the distal site end is distanced from the interlayers, first and second supports, wherein the surface site layer and the interlayers are interposed between the first and second supports; and first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; wherein the conductors are capable of applying an external voltage potential across the polypeptide bonding region.

An effusion source comprises a vitreous C filament and a heater to increase the temperature of the filament to produce a C vapor. Also described is a deposition method comprising (a) depositing a layer of material on a substrate, and (b) during step (a), heating a body of material that includes vitreous carbon so that carbon from the body is vaporized and incorporated into the deposited layer.

Deposition of carbon-containing layers using vitreous carbon source

A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.

Growing community of inventors

Harding Township, NJ, United States of America

Loren Neil Pfeiffer