Peking University

Longyan Wang

Shengdong Zhang

Xin He

Chuanli Leng

Cuicui Wang

A pixel circuit, a drive method based on the pixel circuit, and a display device. The pixel circuit comprises: a first capacitor (C), a second capacitor (C), a second transistor (T), a third transistor (T) and a light-emitting branch for being coupled between a first common electrode (VDD) and a second common electrode (VSS); wherein the light-emitting branch comprises a first transistor (T), a fourth transistor (T) and a light-emitting element (OLED) which are connected in series; a first electrode of the first transistor (T) is coupled to a second electrode of the fourth transistor (T), and a coupling node is a third node (C); and a control electrode of the fourth transistor (T) is used for inputting a second scanning control signal (V), and the fourth transistor (T) switches the ON/OFF state of the light-emitting branch in response to the second scanning control signal (V). At the programming stage, a threshold voltage of the first transistor (T) is input to a first node (A) through the third transistor (T) and is stored; and at the light-emitting stage, a light-emitting current for driving the light-emitting element (OLED) is generated according to information about a voltage difference across two ends of the first capacitor (C). The pixel circuit is used for compensating for the threshold voltage shift of the first transistor (T) and the light-emitting element (OLED).

Pixel circuit and drive method therefor, and display device

Designs and fabrication of dual-gate thin film transistors are provided. An active region and a top gate electrode of the transistor can be made of a transparent thin film material. A photoresist can be coated onto a surface of the transparent conductive thin film for forming the top gate electrode. Light is from the bottom of the substrate during exposure. After the development, a photoresist pattern aligned with the bottom gate electrode is formed on the surface of the conductive thin film. The top gate electrode aligned with the bottom gate electrode is formed by etching the conductive thin film. The bottom gate electrode can be used as a mask, which may save the cost for manufacturing the transistor and improve the accuracy of alignment between the top gate electrode and the bottom gate electrode and the performance of the dual-gate thin film transistor.

Growing community of inventors

Shenzhen, China

Longyan Wang