Other

Tsinghua University

Longtu Li

Xiaohui Wang

Ji Zhou

Shuiyuan Su

Zhenwei Ma

Li Ni Zhang

Tian Shu Wang

Zhilun Gui

Zhenxing Yue

Zhibin Tian

Zhengxing Yue

The present invention provides a nano complex oxide doped dielectric ceramic material used for a multilayer ceramic capacitor using a base metal as a material of internal electrodes. The doped dielectric ceramic material comprises barium titanate and a nano complex oxide dopant, wherein the molar ratio of the barium titanate to the nano complex oxide dopant is in the range of (90 to 98):(2 to 10), the average particle size of the barium titanate is 50 to 300 nm and the nano complex oxide dopant has the following formula (1): wA+xB+yC+zD. The present invention also provides processes for preparing the nano complex oxide doped dielectric ceramic material and ultrafine-grained and temperature-stable multilayer ceramic capacitors using the nano complex oxide doped dielectric ceramic material as a material of dielectric layers.

Nano complex oxide doped dielectric ceramic material, preparation method thereof and multilayer ceramic capacitors made from the same

A composition of material used for making hfMLCIs having a sintering temperature below 1000&deg;. The composition comprises a major component and a minor component, said major component being a general formula: Ba Co Zn Cu Mn Fe O , wherein x, z, w,&equals;0-1.0 and y&equals;0-0.8, and said minor component comprising at least one compound selected from the group of Bi O , V O ,PbO,B O , Lif and CaF . HfMLCIs made from the composition of the present invention are capable of functioning in the frequency region of 300-800 MHz.

Material for making hyper frequency multi-layer chip inductors with high performance and low sintering temperature and a process for preparing the material

This invention relates to the formula and preparation method for a multi-layer chip inductor material used in very high frequencies. The main composition of this material is planar hexagonal soft magnetic ferrite, and ingredient is low temperature sintering aid. Preparation method is a synthetic method of solid phase reaction. The sintering aid is prepared by secondary doping. By the process of ball grinding, drying, pre-calcining, ball grinding, drying, granulating, forming, sintering, and so forth, very high frequency inductor material of superior quality is obtained, realizing low temperature sintering under a temperature lower than 900&deg; C. This invention is of low cost, high performance, suitable for multi-layer chip inductors at very high frequencies of 300M-800 MHz.

Formula and preparation method for multi-layer chip inductor material used in very high frequencies

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Beijing, China

Longtu Li