Shenzhen China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Longqiang Shi

Wenhui Li

Xiaowen Lv

Hejing Zhang

Chihyuan Tseng

Chihyu Su

Shimin Ge

Baixiang Han

Yutong Hu

Shu Jhih Chen

Shujhih Chen

Shu-Jhih Chen

Chih-Yu Su

Zhiyuan Zeng

Yifan Wang

Qinghua Zou

Yawei Liu

Congwei Liao

Chih-yuan Tseng

An organic light-emitting diode (OLED) structure and a manufacturing method thereof are provided. The OLED structure includes a substrate, a metal layer, a passivation layer, an anode, and an OLED functional layer. By setting the OLED functional layer to form a PN junction with low impedance. The PN junction and a conductive layer with high impedance constitute a resistive divider, and the PN junction is turned on by adjusting a high-voltage direct current (DC) input source and a low-voltage DC input source. Because the resistance of the PN junction is very small, the potential of the cathode can be approximated to the potential of the low-voltage DC input source according to resistive voltage divider rule, and the low-voltage DC input source uses low-resistance metal, which can effectively avoid the problem of IR drop.

OLED device structure with reduced voltage drop and manufacturing method thereof

The present invention discloses an external compensation GOA circuit and a display panel. By adding a random detection signal output branch, a first output waveform of a scan signal line fulfilling normal driving is outputted in a normal time, and a second output waveform of the scan signal line fulfilling blanking time random detection is outputted in a blanking time, such that randomly detecting a threshold voltage of the drive transistor by using the blanking time of the scan signal can be achieved to further achieve external real time compensation of the threshold voltage shift, enhance uniformity of screen image display, and improve a lifespan of the display panel.

External compensation gate driver on array (GOA) circuit and display panel

A pixel circuit and a driving method are provided. The pixel circuit includes a switching transistor, a driving transistor, a storage capacitor, a light emitting device, and a reset module. The reset module is configured to output a reset signal to a gate of the driving transistor according to a reset control signal in a reset signal writing and reset stage, to neutralize bias stress on the driving transistor in a data signal writing and light emitting stage. This suppresses further drift of a threshold voltage and ensures stability of light emitting brightness of a light emitting device.

Pixel circuit and driving method

Disclosed are a driving circuit and a display device, comprising a first scan driving circuit, a second scan driving circuit, a selector and at least one pixel unit; wherein the first scan driving circuit and the second scan driving circuit are respectively coupled to the selector and the selector is coupled to the at least one pixel unit; the selector outputs a first scanning signal of the first scan driving circuit to the at least one pixel unit in a first duration to make the at least one pixel unit in a display state; the selector outputs a second scanning signal of the second scan driving circuit to the at least one pixel unit in a second duration to make the at least one pixel unit in a compensation state; wherein the first duration and the second duration are different.

Driving circuit and display device

A structure of an oxide thin film transistor includes: an oxide semiconducting layer, an etching stopper layer on the oxide semiconducting layer, and a source and a drain on the etching stopper layer. Two vias are formed in the etching stopper layer. The oxide semiconducting layer includes two recesses formed therein to extend through a skin layer of the oxide semiconducting layer and respectively corresponding to the two vias. The two recesses are respectively connected with and in communication with the two vias. The source and the drain are respectively filled in the two vias and the two recesses connected with the two vias to directly connect to and physically contact the oxide semiconducting layer.

Structure of oxide thin film transistor

A scan driver circuit includes a pull-up unit and a bootstrap unit arranged on a base. The pull-up unit includes a pull-up thin-film transistor for supplying a scan drive signal. The bootstrap unit includes a bootstrap capacitor electrically connected with the pull-up thin-film transistor. The pull-up thin-film transistor includes a gate electrode, a first insulation layer, and a source electrode and a drain electrode stacked in sequence from the base. The bootstrap capacitor includes first and conductive electrodes. The first conductive electrode and the source electrode are arranged on the same layer and are electrically connected together. A second insulation layer is arranged between the second conductive electrode and the second electrode. The second conductive electrode is electrically connected, through a first via that extends through the second insulation layer and the first insulation layer, to the gate electrode. An array substrate and a display device are also provided.

Scan driver circuit, array substrate and display panel

An OLED external compensation circuit of a depletion type TFT includes a first thin film transistor, a second thin film transistor, a capacitor, an organic light emitting diode, and a compensation circuit. The second thin film transistor is of a depletion type. The compensation circuit is connected with a first node and a second node. A reset signal is inputted into the compensation circuit. The OLED external compensation circuit is suitable for a depletion type TFT in view of the complicated characteristics of the conventional designs of the depletion type TFT and the OLED external compensation. Other examples of the OLED external compensation circuit of another depletion type TFT are also provided and help reduce the cost of the system chip, thereby achieving cost reduction. The OLED external compensation circuit is compatible with an enhanced TFT circuit of which Vth is positive.

OLED external compensation circuit of a depletion type TFT

This invention discloses an ESD protection circuit. The ESD protection circuit is arranged on a display panel. It comprises a first conductive via layer electrically connected with a first signal line for outputting signal and a second signal line for inputting signal, and a thin film transistor. A gate of the thin film transistor is electrically connected with a drain, and the second signal line is electrically connected with the gate and/or the drain of the thin film transistor, and the first signal line is electrically connected with a source of the thin film transistor. This invention also discloses a display panel and a display device. In the present invention, the disconnection of the signal line due to electrostatic breakdown is solved.

ESD protection circuit, display panel, and display device

A GOA circuit uses the high voltage level of a high-frequency clock signal for pulling up the voltage level of a second node during the period of outputting a scan signal, to make the voltage level of the second node be larger than the voltage level of a stage transmitting signal of the (n&#x2212;4)th stage of GOA unit, thereby to keep the pull-up controlling module in off state during the period of outputting the scan signal, for promoting the stability of the GOA circuit and preventing the GOA circuit from malfunction.

Gate driver on array circuit

The present invention provides an array substrate and a manufacturing method thereof, and a display device. The array substrate comprises a base substrate, a metal pattern layer, a data line pattern layer, and a scan line pattern layer. Wherein, the data line pattern layer or the scan line pattern layer and the metal pattern layer are arranged in different layers and are directly connected to the metal pattern layer. So that the data line pattern layer or the scan line pattern layer and the metal pattern layer are formed a parallel structure. Because the resistance of the parallel structure is smaller than the resistance of the data line pattern layer or the scan line pattern layer, the resistance of the parallel structure when is used as a data line or a scan line, is reduced, thereby the display effect is improved.

Array substrate and manufacturing method thereof, and display device

Disclosed are an array substrate of an OLED display device and a method for manufacturing the same. Thin-film transistors having different functions can have different electrical properties. The array substrate includes a base substrate, a semiconductor layer, a first insulating layer, a first metal layer, a second insulating layer, a second metal layer, and a third insulating layer which are arranged sequentially from bottom to top. A plurality of driving units are formed on the array substrate, and each of the driving units comprises a first thin-film transistor and a second thin-film transistor.

Array substrate for OLED display device

Disclosed is an array substrate, a method for manufacturing the array substrate, and a display device. The array substrate includes: a plurality of pixel units arranged in an array, each pixel unit being provided with one thin film transistor including an active layer and a polymer film on array. The polymer film on array is formed with a first via hole, and the active layer is conductive in a region thereof corresponding to the first via hole, such that a pixel electrode located on the polymer film on array is electrically connected to the source through the first via hole.

Array substrate, method for manufacturing array substrate, and display device

Disclosed are an LTPS-based CMOS component and a method for manufacturing the same. The CMOS component includes an NMOS type LTPS. PN junctions are provided in an NMOS type LTPS channel to reduce the movement speed of electrons in the channel, so that hot electron effects can be avoided. The LTPS-based CMOS component can reduce the movement speed of electrons and avoid hot electron effects.

LTPS-based CMOS component and method for manufacturing the same

The present invention provides a manufacture method and a structure of an oxide thin film transistor. The manufacture method of the structure of the oxide thin film transistor comprises providing a carrier; forming an oxide semiconducting layer (); forming an etching stopper layer (); forming two vias () in the etching stopper layer () to expose the oxide semiconducting layer (); removing a skin layer of the oxide semiconducting layer () in the two vias () to form two recesses () respectively connecting the two vias (); forming a source () and a drain () on the etching stopper layer (), and the source () fills one via () and the recess () connecting therewith, and the drain () fills the other via () and the recess () connecting therewith; performing a post process.

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Guangdong, China

Longqiang Shi