Tcl Technology Group Corporation

Longjia Wu

Tianshuo Zhang

Junjie Li

Yulin Guo

The present disclosure relates to a nanomaterial, a light-emitting diode device, and a preparation method thereof. The nanomaterial includes a ZnO nanoparticle and an InOshell layer covering a surface of the ZnO nanoparticle. In the present disclosure, the InOshell layer are coated on the surface of the ZnO nanoparticle to form a ZnO@ InOcore shell structure, that is, prepare the nanomaterial. In the present disclosure, InOhaving a wide bandgap is used as a shell layer to cover a semiconductor ZnO nanoparticle having a relatively narrow bandgap, which can effectively passivate the surface of the ZnO nanoparticle to reduce the surface defects and relieve lattice mismatch. Meanwhile, holes may be effectively blocked from being transported from a light-emitting layer to a cathode to improve the recombination efficiency of electrons and holes on the light-emitting layer. Thus, the light-emitting performance of the light-emitting device may be improved.

Nanomaterial, preparation method thereof, and quantum dot light-emitting diode

A composite material, quantum dot light-emitting diode and preparation method thereof. The preparation method includes: providing ZnO nanoparticles and Au source, Au source is at least one of bulk Au or Au particles; mixing ZnO nanoparticles, Au source, S source with first organic solvent, performing hydrothermal reaction to prepare composite material. By performing hydrothermal reaction in organic solvent using ZnO nanoparticles, bulk Au and/or Au particles, and S source, S source can vulcanize surface of ZnO nanoparticles to form ZnS layer on surface of ZnO nanoparticles, Au source can be thermally dissolved and diffused into isolated distribution of atomic-level Au to realize loading on surface of ZnS layer, to obtain composite material with ZnO nanoparticles as core material, ZnS and Au as shell material. ZnS and Au in composite material can synergistically increase electron transmission efficiency of LED adopting same.

Composite material, quantum dot light-emitting diode and preparation method thereof

A composite thin film includes N thin film layers stacked one over another in sequence from a first thin film layer to an N-th thin film layer. N is an integer satisfying 3&#x2264;N&#x2264;9. The N thin film layers are nano-ZnO thin films. A nano-ZnO particle size of the nano-ZnO thin films gradually increases or decreases from the first thin film layer to the N-th thin film layer.

Composite thin film and formation method and application thereof

An electron transport thin film is comprised of nano-zinc oxide doped with metal ions. The nano-zinc oxide doped with the metal ions is nano-zinc oxide having a surface enriched with the metal ions.

Electron transport thin film and formation method and light emitting diode device

An electron transport material includes zinc oxide (ZnO) doped with metal ions. The metal ions are two or three metal ions of different valences of a same metal element. A lowest valence state of the metal ions is positive divalent.

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Huizhou, China

Longjia Wu