Yangtze Memory Technologies Co., Ltd.

LongDong Liu

Li Hong Xiao

Jun Chen

Zhenyu Lu

Yushi Hu

Qian Tao

Meng Wang

Embodiments of a channel hole plug structure of 3D memory devices and fabricating methods thereof are disclosed. The memory device includes an alternating layer stack disposed on a substrate, an insulating layer disposed on the alternating dielectric stack, a channel hole extending vertically through the alternating dielectric stack and the insulating layer, a channel structure including a channel layer in the channel hole, and a channel hole plug in the insulating layer and above the channel structure. The channel hole plug is electrically connected with the channel layer. A projection of the channel hole plug in a lateral plane covers a projection of the channel hole in the lateral plane.

Growing community of inventors

Hubei, China

LongDong Liu