Hewlett-packard Company

Jds Uniphase Corporation

Capella Photonics, Inc.

Other

Agilent Technologies, Inc.

Toshiba Corporation

Kabushiki Kaisha Toshiba

Rossella Limited

Bridgelux Incorporated

E-tek Dynamics, Inc.

Toshiba Techno Center Inc.

Manutius Ip, Inc.

High Definition Integration Ltd.

Long Yang

Shih-Yuan Wang

Gary Richard Trott

Mark H Garrett

Kok-Wai Chang

Massimo Martinelli

Kent W Carey

Jeffrey E Ehrlich

Yong Qin Chen

Michael R Tan

Chao-Kun Lin

Brian Lee Heffner

Hong Lin

Yevgeniy Churin

Tokuyuki Honda

Valentine N Morozov

John E Bowers

Leslie Ann Field

Phillip W Barth

Julie Elizabeth Fouquet

Richard P Schneider

Michael R T Tan

Joseph Eugene Davis

Kok Wai Chang

Kuochou Tai

David K Donald

Eric G Hanson

Jinxi Shen

Gonzalo Wills

Dubravko I Babic

Warren Hale Lewis

Chih-Wei Chuang

James Joseph Dudley

Danny E Mars

W John Tomlinson

Qingdong Guo

Kenneth H Hahn

William E Fenwick

Robert Ostrom

Karl Shubert

Norihito Hamaguchi

Haining Fan

Will Fenwick

Val N Morozov

Rajeev Ram

Karl Salomaa

Dong Lee

Embodiments generally relate to micro-device arrays. In some embodiments, an array comprises a substrate and a plurality of micro-devices. Each micro-device is suspended over a cavity in the substrate by at least one lateral hinge attached to a side post formed into the substrate. Each micro-device comprises a bonding layer; a metal contact; semiconductor device layers; and a buffer layer. The semiconductor device layers may comprise GaN-based LED layers; wherein the buffer layer comprises AlGaN; and wherein the substrate comprises (111) oriented Silicon. In other cases, the semiconductor device layers may comprise InGaAsP-based LED layers; wherein the buffer layer comprises InGaP; and wherein the substrate comprises GaAs.

Micro light emitting diode

A high electron mobility transistor (HEMT) device with a highly resistive layer co-doped with carbon (C) and a donor-type impurity and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a substrate, the highly resistive layer co-doped with C and the donor-type impurity formed above the substrate, a channel layer formed above the highly resistive layer, and a barrier layer formed above the channel layer. In one embodiment, the highly resistive layer comprises gallium nitride (GaN). In one embodiment, the donor-type impurity is silicon (Si). In another embodiment, the donor-type impurity is oxygen (O).

High electron mobility transistor (HEMT)

A high voltage semiconductor structure with a field plate comprising a depletable material that increases the breakdown voltage of the semiconductor structure. A depletion region forms within the depletable field plate which redistributes the electric field and preventing electric charges from concentrating at the corners of the field plate. The thickness, doping concentration, doping uniformity, and geometric shape of the field plates may be adjusted to optimize the effect of the charge redistribution.

Field plate for high-voltage field effect transistors

The present disclosure presents a novel structure for a dielectric material for use with Group III-V material systems and a method of fabricating such a structure. More specifically, the present disclosure describes a novel dielectric layer that is formed on the top surface of a III-V material where the dielectric layer comprises a first region in contact with the top surface of the III-V material crystalline and a second region adjacent to the first region and at the upper side of the dielectric layer. The dielectric layer has material properties different from traditional dielectric layers as it is composed of both crystalline and amorphous structures. The crystalline structure is at the interface with the III-V material (such as AlGaN or GaN) but gradually transitions into an amorphous structure, both within the same layer and both comprising the same material.

Crystalline-amorphous transition material for semiconductor devices and method for formation

A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand &#x3e;450&#xb0; C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at &#x3e;450&#xb0; C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at &#x3e;380&#xb0; C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at &#x3e;380&#xb0; C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.

High temperature gold-free wafer bonding for light emitting diodes

A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.

Light emitting devices having dislocation density maintaining buffer layers

Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 &#x3bc;m. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction.

GaN LEDs with improved area and method for making the same

Optical switches can include collimator elements that accommodate two or more optical ports. This increases the number of ports the switch can accommodate without having to increase the size of other optical components within the switch. Separate deflectors can be used to accommodate optical signals from two different groups of ports. In some embodiments cross-coupling of signals between the two groups can be accomplished through use of re-direction optics.

Wavelength switch system using angle multiplexing optics

A light source and method for operating a light source are disclosed. The present invention includes a light source and method for using the same. The light source includes a power coupler, a reconfigurable two-dimensional LED array and a controller. The power coupler is configured to receive a power potential that varies as a function of time. The LED array has a plurality of configurations of LEDs, each configuration being characterized by a minimum bias potential and a maximum bias potential. The LED array generates light when a potential between first and second power terminals is greater than the minimum bias potential. The controller varies the configuration of the array such that the power potential remains between the minimum and maximum bias potentials as the power potential varies.

LED light source with direct AC drive

Methods and systems for improved optical efficiency and brightness of display systems are provided herein. Embodiments use laser light sources in substantially continuous mode, thereby increasing the maximum overall output of an optical system. Embodiments exploit the small &#xe9;tendue of laser sources to lower the loss of throughput of an optical system. Embodiments enable a scrolling color scheme that allows a display system to be illuminated with two or more colors at any given time, thereby increasing the brightness of the display system. Embodiments can be used with liquid crystal displays and/or digital mirror displays. Embodiments can be used in single-panel and/or two-panel display systems.

Laser scrolling color scheme for projection display

An optical apparatus can include an optical port array having an M&#xd7;N array of fiber collimator ports. The array of ports is configured such that there is a gap within each column of ports located between two rows of ports. The gap is wide enough to permit a hitless beam switching trajectory to pass between the two rows of ports from one side of the array of ports to an opposite side.

Port array topology for high port count wavelength selective switch

An optical assembly for double passing a transmission grating may include a prism having first, second and third surfaces. A transmission grating may be bonded to the first surface. A first mirror coating may be bonded to the second surface and a second mirror coating to the third surface. The first, second and third surfaces, the transmission grating and the first and second mirror coatings are configured such that light of a predetermined wavelength entering the prism that is incident on the transmission grating is diffracted a first time by the transmission grating towards the second surface, reflected from the second surface to the third surface, reflected from the third surface back to the transmission grating, and diffracted a second time by the transmission grating as the light exits the prism.

Double-pass diffraction grating

Methods and systems for multiple primary color display are provided. Methods and systems of the present invention improve the spectrum efficiency of a color display system, and provide enhanced brightness and color gamut. In an embodiment, methods and systems of the present invention improve the brightness of a color display system employing a high pressure lamp by efficiently incorporating lights components of the lamp output that are outside the red, green, and blue spectrum in creating the color image.

Methods and systems for multiple primary color display

Passive optical components may be used to tap the optical power, e.g., from fibers of a wavelength switch system. The passive optical components are realized by a standard photonics light-wave circuit (PLC) integrated to the fiber collimator array of the wavelength switch system. The PLC includes multiple waveguide paths that optically couple optical signals from one or more fiber ports to one or more corresponding free space optical component ports. Optical signals traveling through these waveguide paths are tapped by one or more optical taps and coupled to one or more corresponding tap ports. Each optical tap is located such that an optical signal is tapped after it is coupled into one of the waveguide paths.

Integrated fiber collimator and passive components

Growing community of inventors

Union City, CA, United States of America

Long Yang