Taiwan Semiconductor Manufacturing Comp. Ltd.

Long-Siang Chuang

Jui-Hei Huang

Chun-Sheng Lin

Chi-Sheng Lo

A method of reducing stress induced defects in a substrate according to an HDP-CVD process including providing a substrate for depositing a layer of material according to an HDP-CVD process; igniting a plasma for carrying out an HDP-CVD process; adjusting plasma operating parameters to achieve a first deposition-sputter ratio with respect to the substrate; depositing a first portion of the layer of material according to a first range of substrate temperatures; and, depositing at least a second portion of the layer of material according to at least a second range of substrate temperatures.

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Tainan, Taiwan

Long-Siang Chuang