Chinese Academy of Sciences

Mediatek Singapore Pte. Ltd.

China Academy of Telecommunications Technology

Long Liu

Ming Liu

Di Wang

Guozhong Xing

Huai Lin

Yan Wang

Zhen Song

Yan Wu

Ling Li

Changqing Xie

Xiaoxin Xu

Qiong Li

Cheng Lu

Wei Tang

Zuheng Wu

Kaiping Zhang

Peiwen Zhang

Guanya Wang

Provided is a spintronic device, a memory cell, a memory array, and a read and write circuit applied in a field of integration technology. The spintronic device includes: a bottom electrode; a spin orbit coupling layer, arranged on the bottom electrode; at least one pair of magnetic tunnel junctions, arranged on the spin orbit coupling layer, wherein each of the magnetic tunnel junctions includes a free layer, a tunneling layer, and a reference layer arranged sequentially from bottom to top, and wherein magnetization directions of reference layers of two magnetic tunnel junctions of each pair of the magnetic tunnel junctions are opposite; and a top electrode, arranged on a reference layer of each of the magnetic tunnel junctions.

Spintronic device, memory cell, memory array and read and write circuit

A transmission power allocation method is provided. The transmission power allocation method is applied in user equipment (UE). The transmission power allocation method includes the following steps. The UE calculates the target power. The UE calculates the path loss of each antenna of the UE. The UE adjusts the transmission power of each antenna, except for a first antenna which corresponds to the maximum path loss, based on the maximum path loss.

Transmission power allocation method and user equipment thereof

The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Three-state spintronic device, memory cell, memory array and read-write circuit

A reconfigurable PUF device based on fully electric field-controlled domain wall motion includes a voltage control layer, upper electrodes, a lower electrode, antiferromagnetic pinning layers, and a magnetic tunnel junction (MTJ). The MTJ includes, from bottom to top, a ferromagnetic reference layer, a potential barrier tunneling layer and a ferromagnetic free layer. In the device, an energy potential well is formed in a middle portion of the ferromagnetic free layer by applying a voltage to the voltage control layer to control magnetic anisotropy, and a current is fed into either of the upper electrodes to drive generation of the magnetic domain walls and pin the magnetic domain walls to the potential well. After the voltage is removed, the potential well is lowered so that the magnetic domain walls are in a metastable state, thereby either a high resistance state or a low resistance state is randomly obtained.

Reconfigurable PUF device based on fully electric field-controlled domain wall motion

A magnetoresistive memory cell includes a first magnetic tunnel junction, a second magnetic tunnel junction and a metal layer. The first magnetic tunnel junction and the second magnetic tunnel junction each are disposed on the metal layer; the metal layer is configured to pass write current, a projection line of an easy axis of the first magnetic tunnel junction on a plane where the metal layer is located forms a first angle against a direction of the write current, and a projection line of an easy axis of the second magnetic tunnel junction on the plane where the metal layer is located forms a second angle against a direction opposite to the direction of the write current; the first angle and the second angle are all less than 90°; the first magnetic tunnel junction and the second magnetic tunnel junction are configured to pass read current.

In-memory computing using SOT-MRAM

Disclosed are a double-stream beamforming method and device, which relate to communication technology. The method comprises: first, according to a DOA angle, determining an array response vector; then according to the array response vector, in accordance with the number of each group of transmission antennae of a base station, distributing parameters to generate two groups of coefficients, and according to the two groups of coefficients, conducting beamforming on the antennae. There is no need to conduct characteristic value decomposition to obtain a characteristic vector, thereby reducing the double-stream beamforming complexity.

Double-stream beamforming method and device

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Beijing, China

Long Liu