Intel Corporation

Altera Corporation

Loke Yip Foo

Choong Kooi Chee

Wai Ling Lee

Teong Guan Yew

Bok Eng Cheah

Jackson Chung Peng Kong

Mei See Chin

Kyung Suk Oh

Yee Huan Yew

Wei Lun Oo

Chee Cheong Tan

Chooi Ian Loh

Hui Lee Teng

Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.

Face-to-face through-silicon via multi-chip semiconductor apparatus with redistribution layer packaging and methods of assembling same

A chip assembly may include a package substrate that includes one or more pins. The chip assembly may also include one or more pads. The one or more pads may be electrically coupled to the one or more pins. In addition, the chip assembly may include a board that includes one or more board pads. Further, the chip assembly may include an anisotropic layer. The anisotropic layer may be positioned between the board and the one or more pads and between the board and a portion of the package substrate. In addition, the anisotropic layer may mechanically couple the board to the one or more pads and to the portion of the package substrate. Further, the anisotropic layer may electrically couple the one or more pads to the one or more board pads.

Chip assemblies

A dual-sided embedded multi-die interconnect bridge provides power and source conduits from the bridge bottom at a silicon portion, in short paths to dice on a die side of an integrated-circuit package substrate. Signal traces are in a metallization on the silicon portion of the dual-sided EMIB. Power, ground and signal vias all emanate from the dual-sided embedded multi-die interconnect bridge, with power and ground entering the bridge from central regions of the silicon portion.

Embedded dual-sided interconnect bridges for integrated-circuit packages

According to various examples, a device is described. The device may include a package substrate. The device may also include a plurality of semiconductor devices disposed on the package substrate, wherein the plurality of semiconductor devices comprises top surfaces and bottom surfaces. The device may also include a plurality of interconnects coupled to the package substrate, wherein the plurality of interconnects are adjacent to the plurality of semiconductor devices. The device may also include a flyover bridge coupled to the top surfaces of the plurality of semiconductor devices and the plurality of interconnects, wherein the flyover bridge is directly coupled to the package substrate by the plurality of interconnects, and wherein the bottom surfaces of the plurality of semiconductor devices are electrically isolated from the package substrate.

Stacked semiconductor package with flyover bridge

A semiconductor device and associated methods are disclosed. In one example, dies are interconnected through a bridge in a substrate. A reference voltage stack extends over at least a portion of the interconnect bridge, and a passive component is coupled to the reference voltage stack. In one example, the passive component helps to reduce interference in the power supply to components in the semiconductor device, such as the dies and the interconnect bridge.

Power delivery for embedded interconnect bridge devices and methods

Devices and methods related to an integrated circuit device are provided. The integrated circuit device includes a mother die and a daughter die, in which the daughter die embedded is in a substrate of the integrated circuit device. Micro bumps of the mother die and the daughter die interface together to form a direct down connection between the mother die and the daughter die.

Interconnection of an embedded die

The present disclosure relates to an innovative method of assigning signals to general-purpose input/output pads of an integrated circuit chip. An inductance matrix for the input/output pads is obtained. A candidate assignment is made of a differential signal to a pair of the input/output pads, and a differential mutual inductance is determined for each open pad location in relation to the pair of input/output pads. Single-ended signals are assigned to open pad locations having the lowest differential mutual inductances. The jitter contribution due to each assigned single-ended signal is computed, and a total jitter is updated. In a first embodiment, said assigning, computing and updating steps are repeated until the total jitter exceeds a total jitter budget. In a second embodiment, said assigning, computing and updating steps are repeated until a number of assigned single-ended signals is equal to a target number. Other embodiments and features are also disclosed.

Growing community of inventors

Bayan Baru, Malaysia

Loke Yip Foo