Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (crolles 2) Sas

S.o.i.tec Silicon on Insulator Technologies

Commissariat À L'energie Atomique (Cea)

Loic Sanchez

Frank Fournel

Chrystel Deguet

Brigitte Montmayeul

Séverine Cheramy

Hubert Moriceau

Xavier Baillin

Sylvain Maitrejean

Takeshi Akatsu

Lea Di Cioccio

Thomas Signamarcheix

Patrick Leduc

Laurent Bally

Emilie Bourjot

Thomas Magis

Sebastien Mermoz

A process for bonding chips to a substrate by direct bonding includes providing a support with which the chips are in contact, the chips in contact with the support being separate from one another. This bonding process also includes forming a liquid film on one face of the substrate, bringing the chips into contact with the liquid film, where the action of bringing the chips into contact with the liquid film causes attraction of the chips toward the substrate, and evaporating the liquid film in order to bond the chips to the substrate by direct bonding.

Method for bonding chips to a substrate by direct bonding

A method for transferring at least one chip, from a first support to a second support, includes forming, while the chip is assembled to the first support, an interlayer in the liquid state between, and in contact with, a front face of the chip and an assembly surface of a face of the second support and a solidification of the interlayer. Then, the chip is detached from the first support while maintaining the interlayer in the solid state.

Method for transferring chips

A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Method for direct bonding with self-alignment using ultrasound

A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

Etching method for forming a carrier having inward side walls in particular for confining a droplet for capillary self-assembly

A system is provided for individually supporting at least one component having opposing front and back faces, including a supporting device having a plurality of cells each delimited by a wall and having a contact zone to support the component, at least a part of the cells each receiving a component by its front face, the supporting and contact zones are configured so a surface of the front face is not in contact with the wall, the contact zone is located on a periphery of the front face and forms a closed zone around the front face, the supporting zone forms a closed zone on the wall, and the contact zone includes an edge surface set back in a thickness direction with respect to the front face, the thickness direction extending from the front to the back face perpendicular to at least one of the faces.

Device and method for individual support of components

The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

Method for revealing emergent dislocations in a germanium-base crystalline element

A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.

Method for fabricating a semiconductor on insulator wafer

Growing community of inventors

Voiron, France

Loic Sanchez