Asml Netherlands B.v.

Loek Johannes Petrus Verhees

Patricius Aloysius Jacobus Tinnemans

Franciscus Godefridus Casper Bijnen

Edo Maria Hulsebos

Ralph Brinkhof

Hakki Ergün Cekli

Henricus Johannes Lambertus Megens

Maikel Robert Goosen

Weitian Kou

Willem Seine Christian Roelofs

Hadi Yagubizade

Wendy Johanna Martina Van De Ven

Manouk Rijpstra

Matthijs Cox

Ahmet Koray Erdamar

Pieter Jacob Heres

Tran Thanh Thuy Vu

Jorn Kjeld Lucas

Ingrid Margaretha Ardina Van Donkelaar

Boris Menchtchikov

Sudharshanan Raghunathan

Maaike Van't Westeinde

Arie Jeffrey Den Boef

Richard Johannes Franciscus Van Haren

Alexander Ypma

Xing Lan Liu

Leon Paul Van Dijk

Irina Lyulina

Victor Emanuel Calado

Maaike Van T Westeinde

Hakki Ergun Cekli

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.

Method of controlling a lithographic apparatus and device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

A lithographic technique that involves obtaining values of parameters of a substrate deformation model, wherein the values are based on positional data obtained from an alignment system for a lithographic apparatus; modifying the values using a mapping operation, wherein the mapping operation is based on a correlation found between the parameters and overlay data for a previous set of substrates; and generating, based on the modified values, electronic data adapted to configure the lithographic apparatus.

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters &#x3bb; and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.

Lithographic apparatus and device manufacturing method

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Reusel, Netherlands

Loek Johannes Petrus Verhees