Northrop Grumman Systems Corporation

Loan T Le

Vincent Gambin

Jesse B Tice

Benjamin Poust

Michael D Lange

A method for wafer-level deposition of a semiconductor layer structure including at least one two-dimensional black phosphorus layer. The method includes providing a wafer substrate and a metal catalyst layer on the substrate. The method includes heating a phosphorus material to generate a Pflux and heating the Pflux to generate a Pflux, where the Pflux is deposited on the metal catalyst layer using molecular beam epitaxy or chemical vapor deposition. The process of depositing the black phosphorus layer can include adding a dopant or alloy to the Pflux to modify the band gap of the phosphorus layer. The method includes heating the substrate to a temperature above a temperature that causes red phosphorus to evaporate from the substrate, but does not cause black phosphorus to evaporate from the substrate.

Wafer-scale catalytic deposition of black phosphorus

An apparatus for nano-imprinting using a high-pressure crystal phase transformation, includes: a stamp configured to perform nano-imprinting, the stamp comprising a pedestal and a base, wherein the pedestal is shaped to match an intended shape of a device to be fabricated; a tool chuck physically connected to the stamp, the tool chuck configured to allow a user to apply one or more of pressure and temperature to the film; a substrate upon which the device can be fabricated; a thin film physically connected to the substrate; and a tool stage physically connected to the substrate, the tool stage configured to allow a user to apply one or more of pressure and temperature to the film.

Growing community of inventors

Redondo Beach, CA, United States of America

Loan T Le