Trw Limited

Lloyd T Yuan

Yu-Wen Y Chang

Thomas G Mills

Jack S Honda

An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the embodiment disclosed, a Gunn effect diode is formed on a substrate of gallium arsenide (GaAs), together with a cavity region and a metalized heat sink layer permitting operation at relatively high power levels. A bias current is applied through a conductive strip and then through the cavity region to the diode, and a quarter-wave choke is provided in the conductive strip to prevent transmission of radio-frequency energy back along the strip.

Active high frequency semiconductor device with integral waveguide

A broadband waveguide mixer suitable for the microwave and millimeter wave regions is described. The mixer is characterized by having a unique dual-guide mixer mount through which extends two parallel and spaced waveguides. The RF wave and the local oscillator wave are respectively impressed on the two waveguides via a hybrid coupler. A pair of crossbars extend through each waveguide. A pair of diodes connected back-to-back are disposed in each waveguide and are connected to the respective crossbars. Each pair of diodes has a polarity opposite to that of the other pair. The output is derived from a coaxial cable connected to the adjacent ends of the two crossbars. The input signals may be applied by a folded hybrid tee or a short slot hybrid coupler to simplify the input structure. The mixer has low noise and broadband performance.

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Hacienda Heights, CA, United States of America

Lloyd T Yuan