Kabushiki Kaisha Toshiba

Llewellyn John Cooper

Nalin K Patel

Mark Levence Leadbeater

A semiconductor device is presented which exhibits both interband and intraband tunnelling. The device comprises two active layers (21, 23) which are sandwiched between two barrier layers (3, 5). These layers are located between first and second terminals (7, 9). The active layers (21, 23) are chosen such that the conduction band edge (27) of the first active layer (21) having a lower energy than the valence band edge (25) of the second active layer (23);

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Cambridge, United Kingdom

Llewellyn John Cooper