Boe Technology Group Co., Ltd.

Beijing Shiyan Technology Co., Ltd.

Lizhen Zhang

Qi Yao

Wei He

Sheng Xu

Wusheng Li

Huili Wu

Renquan Gu

Shipei Li

Fang He

Xue Dong

Libo Wang

Yi Zhou

Dongsheng Yin

Xuefei Zhao

Changfeng Li

Wei Sun

Guangcai Yuan

Rui Liu

Kuanjun Peng

Tieshi Wang

Minglei Chu

Jiankang Sun

Ying Zhao

Jing Yu

Dini Xie

Jiushi Wang

Hongrun Wang

Mingxing Wang

Shunyu Yao

Zhanfeng Cao

Feng Zhang

Jing Li

Zhongyuan Wu

Ke Fei Wang

Fuqiang Li

Zhijun Lv

Zhiwei Liang

Wenqu Liu

Liwen Dong

Chenyang Zhang

Zhao Cui

Yang Yue

Xiaoxin Song

Muxin Di

Detian Meng

Zhen Zhang

Dongfei Hou

Yupeng Gao

Binbin Tong

Xiawei Yun

Fugiang Li

An array substrate and a display device are provided. The array substrate includes: a substrate, sub-pixel units, first signal lines, and second signal lines; multiple first signal lines and multiple second signal lines intersect to define the opening areas of the sub-pixel units; each second signal line includes: multiple first parts extending along the column direction, and multiple second parts; the second part includes a portion extending along the inclination direction, and the second part connects two first parts; the angle between the inclination direction and the column direction or row direction is greater than 0; each first part is adjacent to the opening area of the sub-pixel units in the row direction, and multiple second parts respectively pass through at least of the areas between adjacent two pixel repeating unit rows, with the distance between the two first parts being greater than 0 in the row direction.

Display panel and display device

A display panel and a display device are provided. The display panel includes sub-pixels, data lines and gate lines. The sub-pixels include pixel circuits connected to the data lines and the gate lines. The display panel includes display subregions and selection signal line groups in one-to-one correspondence, each display subregion includes at least two sub-pixels, each selection signal line group includes selection signal lines, and the selection signal lines corresponding to different display subregions are insulated from each other; the pixel circuit includes a transistor in which an active semiconductor layer includes a first part and a second part, the first part overlaps with the gate line electrically connected with the transistor, and the second part overlaps with at least one selection signal line, and the gate line and the selection signal line are both configured to turn on the transistor upon being input with a turn-on voltage.

A driving backplane, a transfer method for a light-emitting diode chip (), and a display apparatus. The driving backplane comprises: a base substrate (), a driving circuit, a plurality of electromagnetic structures (), and a plurality of contact electrodes (). The plurality of electromagnetic structures () in the driving backplane are symmetrically arranged relative to a first straight line (L) and a second straight line (L). A current signal can be applied to each electromagnetic structure () by means of the driving circuit. Stress generated by a transfer carrier plate () according to the magnetic force of each electromagnetic structure () moves the transfer carrier plate (). When the transfer carrier plate () is stress balanced in each direction parallel to the surface of the transfer carrier plate (), the light-emitting diode chip () is precisely aligned to corresponding contact electrodes ().

Driving backplane, transfer method for light-emitting diode chip, display apparatus

A 3D display assembly, a display panel thereof and a method of manufacturing display panel. The display panel includes: a back plate, and a plurality of sub-pixel structures and partition structures on the back plate. In a first direction, each of the sub-pixel structures includes one or more first sub-sub-pixel structures and one or more second sub-sub-pixel structures arranged alternately. The first sub-sub-pixel structures have the same luminous color as the one or more second sub-sub-pixel structures. Each of the first sub-sub-pixel structures includes a first anode, and each of the second sub-sub-pixel structures includes a second anode. Second anodes are disposed at a side of the partition structures away from the back plate. Adjacent first anodes are partitioned by a partition structure. Orthographic projections of the first anodes on the back plate and orthographic projections of the second anodes on the back plate are connected, or the orthographic projections of the first anodes on the back plate and the orthographic projections of the second anodes on the back plate are overlapped and there is no non-light emitting region between sub-sub-pixel structures, therefore, no dark region is formed in a human eye observation region during 3D display, thereby solving moire problem.

Three-dimensional display assemblies, display panels thereof and methods of manufacturing display panel

An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

Light emitting diode chip and method for manufacturing the same, display device

A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

Light-emitting diode chip having a gap between epitaxial structures and method for manufacturing the same, and display device

The present disclosure discloses a display panel, a manufacturing method, a driving method and a display device. When the display panel needs to display a normal image, a pixel driving circuit and a first control circuit drive an organic light emitting diode to emit light. When the display panel needs to perform fingerprint detection of a finger, the pixel driving circuit and a second control circuit drive a micro light emitting diode to emit light, so that the light emitted by the micro light emitting diode can be received by a photoelectric converter after being reflected by the finger, the photoelectric converter can output a detection signal, and furthermore, fingerprint information of the finger can be determined according to the detection signal.

Display panel, manufacturing method, driving method and display device

The present disclosure relates to the field of display technology, and proposes a display panel, a preparation method thereof, and a display apparatus. The display panel includes an array substrate, a planarization layer group, and a plurality of sub-pixels. The array substrate includes a switch array formed by a plurality of switch units. The planarization layer group is provided on the array substrate, and nano-scale grooves are provided on the planarization layer group. The sub-pixels are provided on a side of the planarization layer group away from the array substrate. The sub-pixel includes a plurality of first electrodes, wherein the first electrode is connected to the switch unit of the array substrate, a nano-scale second gap is provided between two adjacent first electrodes, and an orthographic projection of the second gap on the array substrate is located within an orthographic projection of the groove on the array substrate.

Display panel, preparation method thereof, and display apparatus

Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

Fingerprint recognition sensor and manufacturing method thereof, and display device

A drive backboard, a manufacturing method thereof, a display panel and a display device are provided. The drive backboard includes a plurality of pixel units and a plurality of spare electrode groups. Each pixel unit includes m subpixel units, and m is a positive integer greater than or equal to 2. Each spare electrode group includes two first spare electrodes and one second spare electrode; two adjacent isubpixel units respectively use one first spare electrode in each spare electrode group and share one second spare electrode in each spare electrode group, where i is a positive integer from 1 to m.

Drive backboard, manufacturing method thereof, display panel and display device

Provided are micro light emitting diode display substrate, device and fabrication method thereof. The micro light emitting diode display substrate includes: a first base substrate; micro light emitting diodes on the first base substrate and including first and second electrodes; a common electrode layer on a side of a layer where the first and second electrodes are located away from the first base substrate, and electrically connected to the second electrodes of the micro light emitting diodes and spaced apart from the first electrodes; an interlayer insulating layer on a side of the common electrode layer away from the first base substrate and having via holes exposing the first electrodes of the micro light emitting diodes, respectively; first connection electrodes on a side of the interlayer insulating layer away from the first base substrate, and filling the via holes to be electrically connected to the first electrodes, respectively.

Micro light emitting diode display substrate, device and fabrication method thereof

A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided. The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.

Patterning method of quantum dot layer, quantum dot device and manufacturing method thereof

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Beijing, China

Lizhen Zhang