Sarnoff Corporation

Thomson Licensing S.a.

Amoco/enron Solar

Lightscape Materials, Inc.

Liyou Yang

Philip Michael Heyman

Ralph Doud Whaley, Jr

Murray S Bennett

Yaun-Min Li

Barry Jay Thaler

Joseph H Abeles

Robert L Quinn

Yongchi Tian

Perry Niel Yocom

Tien P Lee

Gerard Frederickson

Gregory James Cohee

Haiyan An

Liangfan Chen

Nagandranath Maley

Richard Joseph Quinn

Nagendranath Maley

Provided among other things is a phosphor of the formulaSrCaGaS:Eu:xGaS&#x2003;&#x2003;(I)wherein x is 0 to about 0.2 (or about 0.0001 to about 0.2), wherein x3 is 0.0001 to 1, and wherein a minor part of the europium component is substituted with praseodymium in an efficiency enhancing amount.

Efficient, green-emitting phosphors, and combinations with red-emitting phosphors

A photonic device suitable for being optically coupled to at least one optical fiber having a first spot-size, the device including: at least one photonic component; and, a graded index lens optically coupled between the at least one photonic component and the at least one optical fiber; wherein, the graded index lens is adapted to convert optical transmissions from the at least one photonic component to the first spot size.

Amorphous silicon alloy based integrated spot-size converter

A photonic integrated circuit including: at least one photonic component being suitable for operation with a plurality of photons and including an operational material having a bandgap energy close to the energy of the photons; and, at least one photonic component being suitable for operation with the plurality of photons, including an operational material having a bandgap energy substantially higher than the photons and being adjacent to the at least one photonic component including an operational material having a bandgap energy close to the energy of the photons. The at least one photonic component including an operational material having a bandgap energy substantially higher than the photons includes at least one amorphous silicon based alloy material.

Photonic integrated circuit (PIC) and method for making same

The present invention is an integrated optical switch, comprising a switching element and an optical detector in communication with the switching element. The integrated optical switch includes an optical detector of amorphous semiconductor material on a semiconductor waveguide. Optical header information is detected and interpreted, and the switch is operated according to the header information.

Integrated optical switch

A testing structure formed on a photonic integrated circuit including a plurality of first photonic components and having a given functionality corresponding to a given interconnectivity of the first photonic components, the testing structure including: at least one second photonic component being suitable for testing at least one of the first photonic components; and, at least one photonic pathway optically coupling the at least one first photonic component to the at least one second photonic component. The at least one photonic pathway is unique from the given interconnectivity.

Photonic devices and PICs including sacrificial testing structures and method of making the same

A photonic device including: at least first and second optical waveguides; and, a buffer at least partially interposed between the first and second optical waveguides where they at least partially overlie one-another so as to at least partially mitigate interference between optical signals traversing the first and second optical waveguides.

Optical waveguide crossing and method of making same

A color cathode-ray tube (CRT) has an evacuated envelope with an electron gun therein for generating at least one electron beam. The envelope further includes a faceplate panel having a luminescent screen with phosphor elements on an interior surface thereof. A focus mask, having a plurality of spaced-apart first conductive strands, is located adjacent to an effective picture area of the screen. The spacing between the first conductive strands defines a plurality of apertures substantially parallel to the phosphor elements on the screen. Each of the first conductive strands has a substantially continuous insulating material layer formed on a screen facing side thereof. A plurality of second conductive wires are oriented substantially perpendicular to the plurality of first conductive strands and are bonded thereto by the insulating material layer. The insulating material layer is composed of a silicate material.

Silicate materials for cathode-ray tube (CRT) applications

A color cathode-ray tube (CRT) has an evacuated envelope with an electron gun therein for generating an electron beam. The envelope further includes a faceplate panel having a luminescent screen with phosphor elements on an interior surface thereof. A focus mask, having a plurality of spaced-apart first conductive strands, is located adjacent to an effective picture area of the screen. The spacing between the first conductive strands defines a plurality of apertures substantially parallel to the phosphor elements on the screen. Each of the first conductive strands has a substantially continuous slightly conductive insulating material layer formed on a screen facing side thereof. A plurality of second conductive wires are oriented substantially perpendicular to the plurality of first conductive strands and are bonded thereto by the slightly conductive insulating material layer. The slightly conductive insulating material layer is a composite material comprising one or more transition metal oxides and a lead-zinc-borosilicate glass.

Slightly conducting insulators for cathode-ray tube (CRT) applications

A color cathode-ray tube (CRT) having an evacuated envelope with an electron gun therein for generating an electron beam is disclosed. The envelope further includes a faceplate panel having a luminescent screen with phosphor lines on an interior surface thereof. A focus mask, having a plurality of spaced-apart first conductive lines, is located adjacent to an effective picture area of the screen. The spacing between the first conductive lines defines a plurality of slots substantially parallel to the phosphor lines on the screen. Each of the first conductive lines has a substantially continuous insulating material layer formed on a screen facing side thereof. A plurality of second conductive lines are oriented substantially perpendicular to the plurality of first conductive lines and are bonded thereto by the insulating material layer. A cap layer is formed over the plurality of second conductive lines and the insulating material. The cap layer is a semiconducting layer that is used to prevent charge accumulation on the insulating material layer.

Cathode ray tube with a focus mask wherein a cap layer formed on the insulating material

A method of manufacturing a luminescent screen assembly for a color cathode-ray tube (CRT) is disclosed. The luminescent screen assembly is formed on an inner surface of a faceplate panel of the CRT. The luminescent screen assembly includes an organic conductive (OC) layer overcoated with an organic photoconductive (OPC) layer. Three different color-emitting phosphors are sequentially deposited over portions of the OPC layer by uniformly charging and than selectively discharging desired areas thereof. Appropriate color-emitting phosphors are then deposited on the discharged areas. The first color-emitting phosphor lines are deposited on the OPC layer by charging and then selectively discharging the OPC layer using a symmetric exposure profile. Thereafter, the OPC layer is charged again and selectively discharged to deposit the second color-emitting phosphor lines using an asymmetric exposure profile. The asymmetric exposure profile is generated using two or more lighthouse exposures that are asymmetrically positioned relative to the midpoint location of the second color-emitting phosphor lines. Thereafter, the OPC layer is again charged and selectively discharged to deposit the third color phosphor lines using a symmetric exposure profile.

Method of manufacturing a luminescent screen for a CRT

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increasing stabilized performance of amorphous silicon based devices

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Growing community of inventors

Plainsboro, NJ, United States of America

Liyou Yang