Globalfoundries Singapore Pte. Ltd.

Nanyang Technological University

Liying Zhang

Ming Zhu

Wanbing Yi

Danny Pak-Chum Shum

Darin A Chan

Pinghui Li

Haiqing Zhou

Xiao Hu

Chenzhong Mu

A non-destructive testing method of analyzing a sample comprising a composite material is disclosed. The method comprises: emitting an electromagnetic signal onto the sample, the electromagnetic signal having a range of frequencies; detecting a response signal transmitted and/or reflected by the sample in response to the electromagnetic signal; processing the response signal to determine variation with frequency of a dielectric permittivity of the sample over the range of frequencies; and determining an indication of a structural characteristic of the sample from a measure of the variation with frequency of the dielectric permittivity of the sample.

Non-destructive testing methods and apparatus

Methods of forming a MTJ dummy fill gradient across near-active-MRAM-cell periphery and far-outside-MRAM logic regions and the resulting device are provided. Embodiments include providing an embedded MRAM layout with near-active-MRAM-cell periphery logic and far-outside-MRAM logic regions; forming a MTJ structure within the layout based on minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first and second metal layers; forming a high-density MTJ dummy structure in the near-active-MRAM-cell periphery logic region based on second minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer; and forming a low-density MTJ dummy structure in the far-outside-MRAM logic region based on third minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer.

Memory device with density-controllable dummy fill strategy for near-MRAM  periphery and far-outside-MRAM logic regions for embedded MRAM technology

Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the same

Growing community of inventors

Singapore, Singapore

Liying Zhang