Growing community of inventors

Wappingers Falls, NY, United States of America

Liyang Song

Average Co-Inventor Count = 4.33

ph-index = 3

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 12

Liyang SongDechao Guo (9 patents)Liyang SongChun-chen Yeh (7 patents)Liyang SongMing Cai (7 patents)Liyang SongQintao Zhang (2 patents)Liyang SongXinhui Wang (2 patents)Liyang SongShreesh Narasimha (1 patent)Liyang SongWilliam K Henson (1 patent)Liyang SongYanfeng Wang (1 patent)Liyang SongYue Liang (1 patent)Liyang SongMaryjane Brodsky (1 patent)Liyang SongEric M Kessler (1 patent)Liyang SongZhihuai Zhu (1 patent)Liyang SongElizabeth Bourgoin (1 patent)Liyang SongChristopher A Buchholz (1 patent)Liyang SongLiyang Song (10 patents)Dechao GuoDechao Guo (232 patents)Chun-chen YehChun-chen Yeh (297 patents)Ming CaiMing Cai (24 patents)Qintao ZhangQintao Zhang (74 patents)Xinhui WangXinhui Wang (56 patents)Shreesh NarasimhaShreesh Narasimha (115 patents)William K HensonWilliam K Henson (55 patents)Yanfeng WangYanfeng Wang (32 patents)Yue LiangYue Liang (31 patents)Maryjane BrodskyMaryjane Brodsky (13 patents)Eric M KesslerEric M Kessler (4 patents)Zhihuai ZhuZhihuai Zhu (1 patent)Elizabeth BourgoinElizabeth Bourgoin (1 patent)Christopher A BuchholzChristopher A Buchholz (1 patent)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. International Business Machines Corporation (8 from 164,108 patents)

2. Globalfoundries Inc. (2 from 5,671 patents)


10 patents:

1. 10817779 - Bayesian network based hybrid machine learning

2. 10256150 - Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning

3. 10170368 - Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning

4. 9484402 - Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion

5. 9397158 - Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion

6. 9059244 - Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion

7. 9040399 - Threshold voltage adjustment for thin body MOSFETs

8. 8957464 - Transistors with uniaxial stress channels

9. 8927364 - Structure and method of high-performance extremely thin silicon on insulator complementary metal—oxide—semiconductor transistors with dual stress buried insulators

10. 8633077 - Transistors with uniaxial stress channels

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12/3/2025
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